SI7911DN-T1 Vishay Intertechnology, SI7911DN-T1 Datasheet - Page 4

• Manufacturer Part Number: SI7911DN-T1
• Description: Dual P-channel 20-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

Si7911DN
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
J
I
D
- Temperature (_C)
25
10
= 250 mA
Single Pulse
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
10
100
100
0.1
10
-2
1
0.1
125
Safe Operating Area, Junction-To-Ambient
r
DS(on)
Limited
I
Square Wave Pulse Duration (sec)
D(on)
Single Pulse
150
T
V
A
New Product
Limited
DS
= 25_C
10
- Drain-to-Source Voltage (V)
-1
1
BV
DSS
Limited
10
1
I
DM
30
25
20
15
10
5
0
Limited
0.001
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
dc
P(t) = 10
0.01
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Single Pulse Power
JM
0.1
- T
t
A
Time (sec)
1
= P
t
2
DM
Z
1
thJA
thJA
100
S-31612—Rev. A, 11-Aug-03
t
t
1
2
(t)
Document Number: 72340
= 75_C/W
10
600
100
600