Si7904DN Vishay Intertechnology, Si7904DN Datasheet - Page 2

• Manufacturer Part Number: Si7904DN
• Description: Dual N-channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7904DN
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
8
4
0
0.0
b
Parameter
0.5
V
a
a
DS
1.0
Output Characteristics
V
a
– Drain-to-Source Voltage (V)
GS
1.5
= 5 thru 2 V
a
2.0
_
2.5
Symbol
0.5, 1 V
V
r
I
3.0
DS(on)
t
t
I
I
D(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
1.5 V
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
_
3.5
4.0
New Product
V
V
I
DS
D
DS
^ 1 A, V
= 10 V, V
I
F
= 16 V, V
V
V
V
V
V
V
V
V
V
= 2.3 A, di/dt = 100 A/ms
DS
V
I
DS
DS
GS
Test Condition
GS
DS
S
DS
DD
GS
= 2.3 A, V
w 5 V, V
= V
= 0 V, V
= 4.5 V, I
= 2.5 V, I
= 10 V, I
= 16 V, V
= 10 V, R = 10 W
= 10 V, R
= 1.8 V, I
GEN
GS
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
= 0 V, T
D
GS
GS
D
GS
D
GS
= 935 mA
D
L
D
= 7.7 A
= "8 V
= 7.0 A
= 10 W
= 4.5 V
= 7.7 A
= 1 A
= 0 V
= 0 V
J
D
G
= 85_C
20
16
12
= 7.7 A
= 6 W
8
4
0
0.0
0.5
V
GS
Transfer Characteristics
25_C
T
– Gate-to-Source Voltage (V)
Min
C
0.45
20
= 125_C
1.0
0.025
0.030
0.037
Typ
0.70
10.2
1.3
2.4
23
15
50
60
45
40
S-04989—Rev. C, 29-Oct-01
Document Number: 71643
1.5
–55_C
"100
Max
0.030
0.036
0.045
1.2
15
23
75
90
68
80
1
5
2.0
Unit
nA
m
mA
nC
ns
W
W
W
V
A
S
V
2.5