Si7925DN Vishay Intertechnology, Si7925DN Datasheet - Page 3

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Si7925DN

Manufacturer Part Number
Si7925DN
Description
Dual P-channel 12-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
Document Number: 72343
S-31614—Rev. A, 11-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
V
D
DS
0.2
GS
Source-Drain Diode Forward Voltage
= 6.5 A
On-Resistance vs. Drain Current
= 6 V
2
= 1.8 V
4
V
0.4
SD
Q
T
g
J
- Source-to-Drain Voltage (V)
I
D
- Total Gate Charge (nC)
= 150_C
4
0.6
- Drain Current (A)
Gate Charge
8
0.8
6
12
T
V
1.0
J
GS
= 25_C
8
= 2.5 V
1.2
V
16
GS
10
= 4.5 V
1.4
1.6
20
12
New Product
1500
1200
0.20
0.16
0.12
0.08
0.04
0.00
900
600
300
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
I
D
On-Resistance vs. Junction Temperature
V
I
= 1.2 A
D
- 25
GS
= 6.5 A
C
2
rss
= 4.5 V
1
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
4
- Drain-to-Source Voltage (V)
25
Capacitance
2
I
D
C
Vishay Siliconix
= 6.5 A
oss
50
C
6
iss
3
75
Si7925DN
8
100
www.vishay.com
4
10
125
150
12
5
3

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