Si7940DP Vishay Intertechnology, Si7940DP Datasheet - Page 3

• Manufacturer Part Number: Si7940DP
• Description: Dual N-channel 12-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71845
S-31727—Rev. C, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.05
0.04
0.03
0.02
0.01
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 11.8 A
0.2
On-Resistance vs. Drain Current
= 6 V
4
3
V
SD
Q
g
V
- Source-to-Drain Voltage (V)
I
0.4
GS
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
= 4.5 V
T
8
6
J
= 150_C
0.6
12
9
0.8
V
T
GS
J
16
12
= 25_C
= 2.5 V
1.0
1.2
20
15
2500
2000
1500
1000
0.05
0.04
0.03
0.02
0.01
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
-25
GS
= 11.8 A
I
D
2
= 4.5 V
= 5 A
1
T
V
V
0
C
J
DS
GS
rss
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
4
- Drain-to-Source Voltage (V)
25
Capacitance
2
Vishay Siliconix
C
50
C
6
I
oss
D
iss
= 11.8 A
3
75
8
Si7940DP
100
www.vishay.com
4
10
125
150
12
5
3