Si7946DP Vishay Intertechnology, Si7946DP Datasheet - Page 3

• Manufacturer Part Number: Si7946DP
• Description: Dual N-channel 150-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 72282
S-31361—Rev. A, 30-Jun-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
10
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3.3 A
0.2
On-Resistance vs. Drain Current
= 75 V
2
3
V
V
SD
GS
T
Q
J
g
= 150_C
= 6 V
- Source-to-Drain Voltage (V)
I
0.4
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
4
6
0.6
6
9
0.8
V
GS
T
J
= 10 V
12
= 25_C
8
1.0
1.2
10
15
New Product
1000
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
800
600
400
200
2.4
2.0
1.6
1.2
0.8
0.4
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
-25
10
GS
= 3.3 A
= 10 V
C
I
D
2
oss
T
= 1 A
V
V
20
0
J
DS
GS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
30
25
Capacitance
4
C
iss
Vishay Siliconix
C
40
50
rss
I
D
= 3.3 A
6
50
75
Si7946DP
100
60
www.vishay.com
8
125
70
150
10
80
3