Si7948DP Vishay Intertechnology, Si7948DP Datasheet - Page 2

• Manufacturer Part Number: Si7948DP
• Description: Dual N-channel 60-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7948DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resostamce
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
15
12
b
9
6
3
0
0
Parameter
a
a
1
V
DS
a
Output Characteristics
- Drain-to-Source Voltage (V)
V
a
a
J
GS
2
= 25_C UNLESS OTHERWISE NOTED)
= 10 thru 4 V
3
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
3 V
New Product
5
I
D
V
V
DS
^ 15 A, V
DS
I
= 30 V, V
F
V
= 60 V, V
V
V
V
V
V
V
DS
V
V
= 2.7 A, di/dt = 100 A/ms
GS
I
DS
DS
Test Condition
GS
S
DS
DS
DD
DD
= 2.7 A, V
= 0 V, V
= 4.5 V, I
= V
w 5 V, V
= 10 V, I
= 15 V, I
= 60 V, V
= 30 V, R
= 30 V, R
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 0 V, T
= 10 V, I
D
D
GS
GS
GS
D
= 250 mA
D
L
L
= "20 V
= 4.6 A
= 4.6 A
= 4.0 A
= 10 V
= 2 W
= 2 W
= 0 V
= 0 V
J
15
12
D
G
9
6
3
0
= 55_C
= 15 A
= 2.5 W
0.0
0.5
V
1.0
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
1.5
Min
15
1
25_C
2.0
T
C
= 125_C
0.060
0.080
Typ
2.5
0.8
3.5
1.5
12
15
30
S-31867—Rev. A, 15-Sep-03
6
2
7
8
7
Document Number: 72403
3.0
-55_C
"100
Max
0.075
0.100
3.5
1.2
20
20
25
40
20
60
3
1
5
4.0
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
4.5