MCH5836 Sanyo Semiconductor Corporation, MCH5836 Datasheet - Page 2

• Manufacturer Part Number: MCH5836
• Description: Mosfet : P-channel Silicon Mosfet Osfet General-purpose Switching Device Applications
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Electrical Characteristics at Ta=25°C
Package Dimensions
unit : mm (typ)
7021A-008
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
5
1
5
1
0.65
2.0
Parameter
Parameter
2
2
4
3
3
4
0.3
0.15
1 :
2 :
3 :
4 :
5 :
SANYO : MCPH5
Gate
Source
Anode
Cathode
Drain
0 to 0.02
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Symbol
V RRM
V RSM
t d (on)
t d (off)
 yfs 
I FSM
I DSS
I GSS
Coss
Ciss
Crss
V SD
Tstg
Qgs
Qgd
V F 1
V F 2
Qg
V R
I O
I R
Tj
t rr
C
t r
t f
50Hz sine wave, 1 cycle
I D =
V DS =
V GS =±8V, V DS =0V
V DS =
V DS =
I D =
I D =
I D =
V DS =
V DS =
V DS =
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =
V DS =
V DS =
I S =
I R =0.5mA
I F =0.3A
I F =0.5A
V R =6V
V R =10V, f=1MHz
I F =I R =100mA, See specified Test Circuit.
--
--
--
--
--
1A, V GS =0V
1mA, V GS =0V
500mA, V GS =
300mA, V GS =
100mA, V GS =
--
--
--
--
--
--
--
--
--
MCH5836
20V, V GS =0V
10V, I D =
10V, I D =
10V, f=1MHz
10V, f=1MHz
10V, f=1MHz
10V, V GS =
10V, V GS =
10V, V GS =
Electrical Connection
--
--
Conditions
100µA
500mA
--
--
--
--
--
--
4V, I D =
4V, I D =
4V, I D =
Conditions
4V
2.5V
1.8V
5
1
- -
- -
- -
1A
1A
1A
2
4
3
min
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
Top view
0.72
--
- -
0.4
20
15
Ratings
typ
--
Ratings
0.89
0.33
380
540
670
115
1.2
1.5
0.4
0.3
0.3
23
15
15
20
8
6
7
--55 to +125
--55 to +125
max
1000
0.33
0.36
- -
- -
±10
500
760
1.4
1.2
15
15
No. A0780-2/6
--
90
10
1
3
1
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
nC
nC
nC
µA
°C
°C
pF
pF
pF
ns
ns
ns
ns
pF
ns
V
V
A
A
V
V
S
V
V
V
V