LPT16ED SiGe Semiconductor, LPT16ED Datasheet - Page 3

• Manufacturer Part Number: LPT16ED
• Description: 30 GHZ Bipolar Transistor
• Manufacturer: SiGe Semiconductor

AC Electrical Characteristics
Typical Performance Characteristics
Please refer to application note (Document 07AN001).
Typical Applications Information
Series or parallel feedback oscillators at 5-16 GHz. (Please refer to application note, Document 07AN001).
38-DST-01 Rev 2.3 Sept 5/02
Symbol
MAG/
IS
MSG
21
I
2
Insertion Power Gain
(Z
Maximum Available
Gain or Maximum Stable
Gain
S
= Z
Parameter
L
= 50Ω)
Residual
(dBc/Hz)
Phase
Noise
V
f = 16GHz
V
f = 16GHz
V
f = 16GHz
V
f = 16GHz
CE
CE
CE
CE
= 1.5V, I
= 3.0V, I
= 1.5V, I
= 3.0V, I
Typical Measurements @
10 GHz, I
Note
Frequency (Hz)
C
C
C
C
C
= 10mA,
= 20mA,
= 10mA,
= 20mA,
=5mA, V
CE
=1V
Min.
0.7
2.3
3.3
4.9
30 GHz SiGe Bipolar Transistor
Typ.
1.0
2.6
3.6
5.2
Max.
1.3
2.9
4.2
5.6
LPT16ED
Unit
dB
dB
dB
dB
Final
3 of 5