SPB80P06PG Infineon Technologies Corporation, SPB80P06PG Datasheet - Page 6

• Manufacturer Part Number: SPB80P06PG
• Description: P-channel Mosfets Power-transistor
• Manufacturer: Infineon Technologies Corporation

Typ. output characteristic
I
parameter: t
Typ. transfer characteristics I
V
parameter: t
D
DS
= f ( V
Rev 1.2
-190
-160
-140
-120
-100
A
A
³
-80
-60
-40
-20
-80
-60
-50
-40
-30
-20
-10
0
0
2 x I
0
0
SPP80P06P
DS
P
tot
-1
-1
D
); T
= 340.00W
p
x R
p
-2
-2
= 80 µs
= 80 µs
j
=25°C
DS(on)max
-3
-3
-4
-4
k
j
-5
-5
-6
-6
-7
-7
i
g
e
c
a
D
h
f
d
b
V GS [V]
= f ( V
a
b
c
d
e
f
g
h
i
j
k
-8
-8
V
V
V
V
-10.0
DS
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-7.5
-8.0
-9.0
GS
GS
-10
-10
Page 6
)
Typ. drain-source-on-resistance
R
parameter: V
Typ. forward transconductance
g
parameter: g
fs
DS(on)
0.075
0.060
0.055
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
= f( I
W
S
50
40
35
30
25
20
15
10
5
0
0
0
D
SPP80P06P
V
b
= f ( I
-4.5
GS
b
); T
-10 -20 -30 -40 -50 -60 -70 -80
-20
[V] =
c
-5.0
c
j
=25°C
D
fs
GS
)
-5.5
d
-40
d
-6.0
e
e
-60
-6.5
f
f
-80
-7.0
g
-7.5
g
h
-100 -120
SPP80P06P
SPB80P06P G
-8.0
i
h
2008-08-18
-9.0
j
-10.0
k
i
A
I
j
A
D
I
D
k
-160
-100