STM2A60 SemiWell Semiconductor, STM2A60 Datasheet - Page 2

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STM2A60

Manufacturer Part Number
STM2A60
Description
Bi-directional Triode Thyristor
Manufacturer
SemiWell Semiconductor
Datasheet

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STM2A60
Electrical Characteristics
※ Notes :
Symbol
(dv/dt)c
R
1. Pulse Width ≤ 300us , Duty cycle ≤ 2%
R
V
I
I
V
V
I
dv/dt
I
V
V
th(j-sp)
+
DRM
th(j-a)
-
-
+
-
-
I
GT1
GT1
GT3
GT1
GT3
TM
GD
GT1
H
Repetitive Peak Off-State
Current
Peak On-State Voltage
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Thermal Impedance
(pcb mounted)
Gate Trigger Current
Gate Trigger Voltage
Items
V
T
I
V
V
T
T
exponential waveform, gate open circuit
T
V
Junction to solder point
Junction to Ambient(minimum footprint)
Junction to Ambient(pad area as in fig 11.)
T
J
J
J
J
D
D
D
D
= 2.1 A, Inst. Measurement
=2/3 V
= 125 °C
= 125 °C, V
= 125 °C, V
= 125 °C, [di/dt]c = -0.75 A/ms,
= 6 V, R
= 6 V, R
= V
DRM
DRM
, Single Phase, Half Wave
L
L
=10 Ω
=10 Ω
Conditions
D
D
= 1/2 V
=2/3 V
DRM
DRM
Min.
1000
0.2
5.0
Ratings
Typ.
5
Max.
156
0.5
1.6
1.5
1.5
1.5
20
20
20
15
70
°C/W
°C/W
°C/W
Unit
V/㎲
V/㎲
mA
mA
mA
V
V
V

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