MCC501-12IO2 westcode, MCC501-12IO2 Datasheet - Page 3

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MCC501-12IO2

Manufacturer Part Number
MCC501-12IO2
Description
Thyristor/diode Modules
Manufacturer
westcode
Datasheet
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
The magnitude of I
(t
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
Rating Report. Types M##501-12io2 and M##501-18io2 Issue 2
p1
IXYS
) should be 20µs or sufficient to allow the anode current to reach ten times I
Voltage Grade
12
14
16
18
GM
G
should be between five and ten times I
I
should remain flowing for the same duration as the anode current and have a
GM
4A/µs
V
DRM
1200
1400
1600
1800
GT
V
.
V
t
p1
RRM
Page 3 of 10
Thyristor/Diode Module Types M##501-12io2 to M##501-18io2
V
DSM
1300
1500
1700
1900
GT
V
V
, which is shown on page 2. Its duration
RSM
vj
I
below 25°C.
G
L
, whichever is greater.
V
DC V
1050
1200
1350
900
D
V
R
August, 2011

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