LD4C-5T Centronic, LD4C-5T Datasheet
LD4C-5T
Manufacturer Part Number
LD4C-5T
Description
General Purpose Silicon Sensors Series 5t
Manufacturer
Centronic
Datasheet
1.LD4C-5T.pdf
(2 pages)
General Purpose Silicon Sensors (Series 5T)
OSD300-5T
QD100-5T
OSD100-5T
LD16(1.8)-5T
LD16(2.5)-5T
LD20(0.36)-5T
OSD7.5-5T
QD50-5T
OSD15-5T
OSD35-5T
OSD50-5T
OSD60-5T
QD7-5T
OSD1-5T
OSD3-5T
OSD5-5T
LD16C-5T
LD12A-5T
Type
For rise time on Quadrants, Linear and Matrix Arrays take figures for single element diodes having equivalent active
LD2C-5T
LD4C-5T
LD20-5T
MD25-5T
Type
No.
LD2A-5T
LD2B-5T
LD35-5T
No.
Type
No.
Characteristics measured at 22°C (±2) ambient, and a reverse bias of 12 volts, unless otherwise stated. Shunt
mm
100
50
mm
300
7
100
7.5
15
35
50
62
1
3
5
2
Active Area
No. of Elements
2
2.99 dia
7.98 dia
11.3 dia
Active Area
2.75 x 2.75
mm
19.54 dia
2.16 x 1.4
(Total)
3.8 x 3.8
5.9 x 5.9
7.9 x 7.9
1.13 dia
2.52 dia
7.98 dia
11.3 dia
Note: Recommended operating voltage range 0 to 12 volts, for all Series 5T Detectors.
5 x 5
mm
12
16
16
16
20
2
4
20
35
2
2
Highlighted items are Centronic standard products generally available from stock
Sep. mm
0.2
0.2
0.2
Linear Arrays (Values given are per element unless otherwise stated)
Responsivity A/W
Quadrants (Values given are per element unless otherwise stated)
0.483
0.035
0.18
The Centronic Series 5T detectors offer high blue sensitivity coupled with high shunt
resistance and low dark leakage current. They are particularly suited to low light level
applications from 430-900 nm where the highest signal to noise ratio is important. They
may be operated photovoltaically or with a reverse bias of up to 12V where lower
capacitance is needed. The 5T range provides the most economic solution for all
applications where high speed of response above 800 nm is not critical.
Min.
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.64
0.25
3.60
Area
mm
1.00
2.02
1.8
2.5
0.36
4.42
7.99
λ = 436 nm
Responsivity A/W
Array Dimensions
2
Min.
0.18
0.18
0.15
Width
λ = 436 nm
1.422
1.27
mm
0.8
0.5
0.2
2.1
2.5
4.0
2.0
0.6
4.6
2.7
Matrix Arrays (Values given are per element unless otherwise stated)
0.21
Typ.
0.21
0.21
0.21
0.21
0.21
0.21
0.21
0.21
0.21
0.175 0.025
Lgth.
1.422 0.45
0.38
0.90
0.8
0.5
0.9
0.96
mm
Typ.
0.5
0.6
2.7
0.21
0.21
0.18
1
Electrical / Optical Specifications
Dark Current (nA)
Resistance measured at ± 10mV.
Max.
200
0.05
0.05
0.05
Sep.
0.05
0.03
mm
0.3
0.1
0.5
10
15
25
30
0.1
0.1
1
2
2
3
5
Dark Current (nA)
Max.
30
50
6
Responsivity
0.15
0.15
0.15
0.15
0.18
0.18
0.18
λ = 436 nm
Min.
0.18
0.18
0.18
0.18
0.15
Single Elements
Typ.
A/W
30
0.2
0.5
0.5
1
1
2
5
6
8
0.18
0.18
0.18
0.18
0.21
0.21
0.21
Typ.
0.21
0.21
0.21
0.21
0.18
Typ.
2
3
5
area
λ = 436 nm
NEP WHz
3.5e-13
2.5e-14
3.0e-14
3.3e-14
4.6e-14
5.5e-14
7.5e-14
1.6e-13
2.3e-13
2.1e-13
Shunt Resistance
Typ.
λ = 436 nm
Min.
100
100
100
100
100
100
NEP WHz
100
40
100
50
40
5
2.3e-14
4.6e-14
7.0e-14
Megohms
Typ.
-½
Vr=0 V
1000
2000
2000
1500
1500
1000
Capacitance pF
7500
-½
Typ.
1000
1000
500
2000
2000
Max.
1300
1800
2500
200
130
180
390
950
35
80
Vr=0 V
Capacitance pF
Max.
330
650
50
Vr=12V
λ = 436 nm
NEP WHz
1500
Max.
2.9e-14
4.0e-14
2.0e-14
2.0e-14
2.0e-14
2.0e-14
2.5e-14
200
270
310
520
2.5e-14
2.5e-14
1.7e-14
1.7e-14
6.4e-14
20
35
40
80
7
Vr=12V
Max.
130
15
80
Shunt Resistance
-½
Min.
250
100
100
60
50
20
1
5
3
2
Meg. ohms
Vr=0V
Shunt Resistance
Capacitance pF
Min.
130
15
38
10
10
60
80
130
240
Min.
30
60
15
80
10
Meg. ohms
5
1000
Typ.
700
600
300
200
100
Vr=12V
25
12
15
5
Typ.
10
11
14
20
12
4
3
2
25
47
Typ.
1200
6
5
300
100
RL = 50 Ω Typ.
Risetime ns
λ = 820 nm
Dark Current
Max.
10
Crosstalk%
λ = 900 nm
Max.
2
5
5
5
5
5
50
2
5
5
5
125
5
5
5
10
12
20
26
30
45
7
9
9
nA
Typ.
0.5
0.5
0.5
0.5
0.5
0.5
Typ.
0.7
0.5
0.5
1
1
5
1
1
1
Package
Package
Package
8 / 23
15
21
20
16
16
16
13
10
11
16
17
18
2
6
1
1
3
3
3
9
9
7
4
4
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