SI7120ADN Vishay Siliconix, SI7120ADN Datasheet
SI7120ADN
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SI7120ADN Summary of contents
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... Bottom View Ordering Information: Si7120ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Avalanche Current Single Avalanche Energy ...
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... Si7120ADN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...
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... Document Number: 72959 S10-1041-Rev. A, 03-May-10 New Product Drain Current ( Gate Charge Si7120ADN Vishay Siliconix 125 ° ° °C 0 0.0 1.0 2.0 3.0 4 Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... Si7120ADN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 250 μ 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product °C J 0.6 0.8 1.0 1 100 125 150 ...
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... New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7120ADN Vishay Siliconix Notes Duty Cycle Per Unit Base = R ...
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... TYP. 2.3 TYP. 3.30 3.40 3.05 3.15 1.60 1.73 1.85 1.98 0.34 TYP. 0.65 BSC 0.86 TYP 0.41 0.51 0.43 0.56 0.13 0.20 - 12° 0.25 0.36 0.125 TYP. Package Information Vishay Siliconix Backside View of Single Pad Backside View of Dual Pad INCHES MIN. NOM. MAX. 0.038 0.041 0.044 0.000 - 0.002 0.009 ...
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... To take the advantage of the single PowerPAK 1212-8’s thermal performance see Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 single in the index of this document. In this figure, the drain land pattern is given to make full contact to the drain pad on the PowerPAK package ...
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... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the Pow- erPAK 1212-8 dual package ...
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... A subsequent experiment was run where the copper on the back-side was reduced, first stripes to mimic circuit traces, and then totally removed. No signif- icant effect was observed. whereas a rise DS(ON) as high DS(ON) AN822 Vishay Siliconix TSOP-8 PPAK 1212 PPAK SO-8 Dual Single Dual Single 90 2.4 5 ...
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... AN822 Vishay Siliconix 105 Spreading Copper (sq. in 0.00 0.25 0.50 0.75 Figure 5. Spreading Copper - Si7401DN CONCLUSIONS As a derivative of the PowerPAK SO-8, the PowerPAK 1212-8 uses the same packaging technology and has been shown to have the same level of thermal perfor- mance while having a footprint that is more than 40 % smaller than the standard TSSOP-8 ...
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... Return to Index Return to Index Document Number: 72597 Revision: 21-Jan-08 ® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.025 (0.635) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix 0.010 (0.255) 0.030 (0.760) www.vishay.com 7 Datasheet pdf - http://www.DataSheet4U.net/ ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...