SI7216DN Vishay Siliconix, SI7216DN Datasheet

no-image

SI7216DN

Manufacturer Part Number
SI7216DN
Description
Dual N-Channel 40-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7216DN
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7216DN-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
30 026
www.DataSheet.co.kr
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73771
S11-1142-Rev. C, 13-Jun-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequade bottom side solder interconnection.
V
DS
40
(V)
Ordering Information: Si7216DN-T1-E3 (Lead (Pb)-free)
8
0.039 at V
D1
0.032 at V
3.30 mm
7
D1
R
DS(on)
6
PowerPAK 1212-8
D2
GS
GS
5
Si7216DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
()
D2
J
= 4.5 V
= 10 V
= 150 °C)
Dual N-Channel 40-V (D-S) MOSFET
1
S1
2
G1
Bottom View
3
I
D
S2
6
5
3.30 mm
(A)
e
e
4
This document is subject to change without notice.
G2
c, d
A
Q
= 25 °C, unless otherwise noted)
5.5 nC
g
(Typ.)
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Low Thermal Resistance PowerPAK
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Primary Side Switch
• Synchronus Rectification
Symbol
T
Available
Package with Small Size and Low 1.07 mm
Profile
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
stg
G
1
N-Channel MOSFET
g
and UIS tested
®
Power MOSFET
D
S
1
1
- 50 to 150
6.5
5.2
2.5
1.6
Limit
G
± 20
2
20.8
13.3
260
40
20
10
2
6
5
6
a, b
5
e
e
a, b
a, b
e
a, b
a, b
N-Channel MOSFET
Vishay Siliconix
D
S
www.vishay.com/doc?91000
2
2
®
Si7216DN
www.vishay.com
Unit
mJ
°C
W
V
A
1
Datasheet pdf - http://www.DataSheet4U.net/

Related parts for SI7216DN

SI7216DN Summary of contents

Page 1

... V GS PowerPAK 1212-8 3. Ordering Information: Si7216DN-T1-E3 (Lead (Pb)-free) Si7216DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy ...

Page 2

... Si7216DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 94 °C/W. SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage ...

Page 3

... J Symbol Test Conditions 3.2 A, dI/dt = 100 A/µ This document is subject to change without notice. Si7216DN Vishay Siliconix Min. Typ ° 0 ° www.vishay.com/doc?91000 Max. Unit 1 www.vishay.com 3 Datasheet pdf - http://www ...

Page 4

... Si7216DN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted 0.0 0.3 0 Drain-to-Source Voltage (V) DS Output Characteristics 0. 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage ...

Page 5

... °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient This document is subject to change without notice. Si7216DN Vishay Siliconix 0.20 0.16 0.12 0.08 125 °C 0.04 25 °C 0. Gate-to-Source Voltage (V) GS On-Resistance vs ...

Page 6

... Si7216DN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Case Temperature (°C) C Power, Junction-to-Case * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case This document is subject to change without notice. Si7216DN Vishay Siliconix Notes Duty Cycle ...

Page 8

... TYP. 2.3 TYP. 3.30 3.40 3.05 3.15 1.60 1.73 1.85 1.98 0.34 TYP. 0.65 BSC 0.86 TYP 0.41 0.51 0.43 0.56 0.13 0.20 - 12° 0.25 0.36 0.125 TYP. Package Information Vishay Siliconix Backside View of Single Pad Backside View of Dual Pad INCHES MIN. NOM. MAX. 0.038 0.041 0.044 0.000 - 0.002 0.009 ...

Page 9

... To take the advantage of the single PowerPAK 1212-8’s thermal performance see Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 single in the index of this document. In this figure, the drain land pattern is given to make full contact to the drain pad on the PowerPAK package ...

Page 10

... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the Pow- erPAK 1212-8 dual package ...

Page 11

... A subsequent experiment was run where the copper on the back-side was reduced, first stripes to mimic circuit traces, and then totally removed. No signif- icant effect was observed. whereas a rise DS(ON) as high DS(ON) AN822 Vishay Siliconix TSOP-8 PPAK 1212 PPAK SO-8 Dual Single Dual Single 90 2.4 5 ...

Page 12

... AN822 Vishay Siliconix 105 Spreading Copper (sq. in 0.00 0.25 0.50 0.75 Figure 5. Spreading Copper - Si7401DN CONCLUSIONS As a derivative of the PowerPAK SO-8, the PowerPAK 1212-8 uses the same packaging technology and has been shown to have the same level of thermal perfor- mance while having a footprint that is more than 40 % smaller than the standard TSSOP-8 ...

Page 13

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK 0.016 (0.405) 0.016 (0.405) 0.026 (0.660) 0.026 (0.660) Return to Index Return to Index www.vishay.com 1 ® 1212-8 Dual 0.152 0.152 (3.860) (3.860) 0.039 0.068 0.039 0.068 (0.990) (1.725) (0.990) (1.725) 0.039 (0.990) ...

Page 14

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

Related keywords