MCH6610 Sanyo, MCH6610 Datasheet
MCH6610
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MCH6610 Summary of contents
Page 1
... V DS =50V GSS 8V (off =10V =100 A yfs V DS =10V =100mA R DS (on =100mA = (on =50mA =2. (on =10mA =1.5V N-Channel Silicon MOSFET MCH6610 [MCH6610] 0 Source1 2 : Gate1 2 ...
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... See specified Test Circuit =10V =10V =200mA Qgs V DS =10V =10V =200mA Qgd V DS =10V =10V =200mA =200mA Electrical Connection V DD =25V =100mA R L =250 D V OUT S1 MCH6610 S 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.6 0.7 0.8 0.9 1.0 IT00274 Ta= ...
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... Diode Forward Voltage Ciss, Coss, Crss -- V DS 100 1 Drain-to-Source Voltage MCH6610 =2. 1 0.001 IT00278 1 0.1 100 120 140 160 0.01 IT00280 1000 ...
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... Drain-to-Source Voltage Note on usage : Since the MCH6610 is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...