MCH6616 Sanyo, MCH6616 Datasheet

MCH6616

Manufacturer Part Number

MCH6616

Description

Ultrahigh-Speed Switching Applications

Manufacturer

Sanyo

Datasheet

1.MCH6616.pdf (4 pages)

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Download datasheet (29Kb)

Ordering number : ENN7013

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : FQ

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

2.5V drive.

Composite type with 2 MOSFETs contained in a single

package, facilitating high-density mounting.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

Ultrahigh-Speed Switching Applications

I D =1mA, V GS =0

V DS =20V, V GS =0

V GS = 8V, V DS =0

V DS =10V, I D =1mA

V DS =10V, I D =0.8A

I D =0.8A, V GS =4V

I D =0.4A, V GS =2.5V

I D =0.1A, V GS =1.8V

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

MCH6616

Conditions

Package Dimensions

unit : mm

2173A

Conditions

0.65

2.0

0.8mm)1unit

0.3

[MCH6616]

min

N-Channel Silicon MOSFET

0.4

1.6

71801 TS IM TA-3262

0.15

Ratings

typ

Ratings

180

220

300

2.4

MCH6616

Continued on next page.

--55 to +150

1 : Source1

2 : Gate1

3 : Drain2

4 : Source2

5 : Gate2

6 : Drain1

SANYO : MCPH6

max

230

310

450

150

1.3

1.6

6.4

0.8

No.7013-1/4

Unit

Related parts for MCH6616

MCH6616 Summary of contents

Page 1

... I DSS V DS =20V GSS 8V (off =10V =1mA yfs V DS =10V =0. (on =0.8A = (on =0.4A =2. (on =0.1A =1.8V N-Channel Silicon MOSFET MCH6616 [MCH6616] 0.3 0. Source1 Gate1 0. Drain2 2 ...

... See specified Test Circuit =10V =4V =1.6A Qgs V DS =10V =4V =1.6A Qgd V DS =10V =4V =1. =1.6A Electrical Connection V DD =10V =800mA R L =12 OUT S1 MCH6616 S 0.6 0.7 0.8 0.9 1.0 IT02916 Ta= IT03305 Ratings min typ max 105 ...

Page 3

... Drain Current 4 =10V I D =1.6A 3.5 3.0 2.5 2.0 1.5 1.0 0 0.2 0.4 0.6 0.8 1.0 Total Gate Charge 1.0 0.8 0.6 0.4 0 100 Ambient Temperature MCH6616 =10V 0.2 0.3 1.0 IT02920 1000 100 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice. MCH6616 PS No.7013-4/4 ...

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MCH6616 Sanyo, MCH6616 Datasheet

MCH6616

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MCH6616 Summary of contents

Page 1

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