TEA1113 Philips Semiconductors, TEA1113 Datasheet - Page 13
![no-image](/images/manufacturer_photos/0/5/522/philips_semiconductors_sml.jpg)
TEA1113
Manufacturer Part Number
TEA1113
Description
Low voltage versatile telephone transmission circuit with dialler interface
Manufacturer
Philips Semiconductors
Datasheet
1.TEA1113.pdf
(20 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TEA1113
Manufacturer:
PHILIPS
Quantity:
65
Company:
Part Number:
TEA1113T
Manufacturer:
MEANWELL
Quantity:
2 000
Part Number:
TEA1113T
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Philips Semiconductors
1997 Mar 27
Dynamic limiter and microphone mute (pin DLS/MMUTE)
D
V
THD
t
t
M
V
I
t
Receiving amplifier (pins IR, QR and GAR)
G
V
V
Automatic gain control (pin AGC)
I
I
att
rel
IL
rel
start
stop
SYMBOL
Z
G
G
G
G
o(rms)
G
LN(max)(p-p)
IL
norx(rms)
Low voltage versatile telephone
transmission circuit with dialler interface
YNAMIC LIMITER BEHAVIOUR
vrx
ICROPHONE MUTE INPUT
i
vtxm
vrx(f)
vrx(T)
vrxr
vtrx
maximum output voltage swing
on the line (peak-to-peak value)
total harmonic distortion
attack time, V
2 mV up to 20 mV
release time, V
20 mV down to 2 mV
gain reduction
LOW level input voltage
LOW level input current
release time after a LOW level
on pin DLS/MMUTE
input impedance
voltage gain from IR to QR
gain variation with frequency
referred to 1 kHz
gain variation with temperature
referred to 25 C
gain voltage reduction range
maximum output voltage
(RMS value)
noise output voltage at pin QR
(RMS value)
gain control range for
microphone and receiving
amplifiers with respect to
I
highest line current for maximum
gain
lowest line current for minimum
gain
line
= 15 mA
PARAMETER
MIC
MIC
jumps from
jumps from
I
I
V
V
C
C
DLS/MMUTE = LOW
C
V
f = 300 to 3400 Hz
T
external resistor connected
between GAR and QR
I
R
I
R
R
IR open-circuit;
psophometrically weighted
(P53 curve)
I
line
line
p
p
line
amb
MIC
MIC
IR
DLS
DLS
DLS
L
L
L
= 0 mA sine wave drive;
= 0 mA sine wave drive;
= 150 ; THD = 2%
= 450 ; THD = 2%
= 150 ;
= 15 mA; V
= 4 mA
= 4 mV (RMS)
= 85 mA
= 4 mV (RMS) + 10 dB
= 4 mV (RMS) + 15 dB
= 25 to +75 C
= 470 nF
= 470 nF
= 470 nF
CONDITIONS
13
ref
= 3.7 V
3.8
50
V
40
30.3
240
350
EE
MIN.
0.4
4.65
1.6
1.5
150
80
60
30
20
31.3
290
410
5.8
25
59
TYP.
0.2
0.3
86
Product specification
2
10
5
V
32.3
12
EE
MAX.
TEA1113
+ 0.3
V
%
%
ms
ms
dB
V
ms
k
dB
dB
dB
dB
mV
mV
dBVp
dB
mA
mA
UNIT
A