TEA1211HN Philips Semiconductors, TEA1211HN Datasheet - Page 12

• Manufacturer Part Number: TEA1211HN
• Description: High efficiency auto-up/down DC/DC converter
• Manufacturer: Philips Semiconductors

Philips Semiconductors
10 CHARACTERISTICS
T
Notes
1. Current limit level is defined by the external R
2. Measured at T
3. To avoid additional supply current, it is advised to use HIGH levels not lower than V
2003 Oct 13
Voltage levels
V
V
V
V
V
V
Current levels
I
I
I
Power MOSFETs; note 2
R
R
R
Timing
f
f
Digital levels: pins SYNC/PWM, SHDWN, SCL and SDA
V
V
Temperature
T
T
amb
q
shdwn
max
sw
sync
I
amb
max
OUT
IN(start)
IN
IN(uvlo)
FB
OUT(wdw)
IL
IH
DS(on)(N)
DS(on)(P)
DS(on)(P-up)
High efficiency auto-up/down
DC/DC converter
lim
SYMBOL
= 40 to +85 C; all voltages with respect to ground; positive currents flow into the IC; unless otherwise specified.
output voltage
start voltage
input voltage
under voltage lockout level
feedback voltage level
output voltage window as
percentage of V
quiescent current
current in shut-down mode
current limit deviation
maximum continuous
input/output current
pin-to-pin resistance NFETs V
pin-to-pin resistance PFETs V
pin-to-pin resistance P-up
FET between pins LXB and
OUT
switching frequency
synchronization input
frequency
LOW-level input voltage
HIGH-level input voltage
ambient temperature
internal cut-off temperature
amb
= 25 C.
PARAMETER
OUT
V
I
PWM mode
no load
I
T
V
PWM mode
note 3
load
lim
amb
OUT
IN
IN
OUT
lim
= 1 A; note 1
= 3.5 V
= 3.5 V
CONDITIONS
< 100 mA
resistor, see Chapter 11.
< 70 C
= 3.5 V;
= 1.5 V
12
1.50
2.45
V
1.20
1.5
450
4.5
0
0.6
120
30
40
IN(start)
MIN.
V
IN
2.55
V
1.25
2.0
100
< 1
65
65
100
600
13
+25
135
IN(start)
IN
TYP.
0.5 V.
0.15
Preliminary specification
TEA1211HN
5.50
2.65
5.50
1.30
3.0
2
+30
1.7
85
85
135
750
20
0.4
V
+85
150
IN
MAX.
+ 0.3 V
V
V
V
V
V
%
%
A
m
m
m
kHz
MHz
V
UNIT
C
C
A
A