XP152A12COMR Torex Semiconductor, XP152A12COMR Datasheet - Page 4

• Manufacturer Part Number: XP152A12COMR
• Description: Power MOS FET
• Manufacturer: Torex Semiconductor

■
0.0001
1000
0.001
100
-10
Gate/Source Voltage vs. Gate Charge
0.01
10
-8
-6
-4
-2
0.1
0
1
0.0001
0
0
Capacitance vs. Drain/Source Voltage
Drain/Source Voltage:Vds (V)
2
-5
Gate Charge:Qg (nc)
0.001
4
-10
Standardized Transition Thermal Resistance vs. Pulse Width
Vds=-10V, Id=-0.7A, Ta=25℃
Coss
Ciss
Crss
Vgs=0V, f=1MHz, Ta=25℃
6
-15
8
0.01
-20
10
Pulse Width:PW (s)
0.1
10000
1000
-2.5
-1.5
-0.5
100
Reverse Drain Current vs. Source/Drain Voltage
10
-3
-2
-1
1
0
0
0
Switching Time vs. Drain Current
td(off)
tf
Vgs=-5V, Vdd≒-10V, PW=10μs, duty≦1%, Ta=25℃
-0.2
Rth(ch-a)=250℃/W (implemented on a ceramic PCB)
Source/Drain Voltage:Vsd (V)
1
tr
-0.5
Drain Current:Id (A)
td(on)
-4.5V
-0.4
-2.5V
-1
Vgs=0V, 4.5V
-0.6
10
Ta=25℃, Pulse Test
-1.5
-0.8
-2
-1
100
477
u