CEM2030A Chino Excel Technology, CEM2030A Datasheet
CEM2030A
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CEM2030A Summary of contents
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Dual Enhancement Mode Field Effect Transistor(N and P Channel) FEATURES Ω 20V , =30m DS(ON) Ω R =40m DS(ON) Ω -20V , -4. =90m DS(ON) Ω R =120m @V DS(ON) Super high dense cell design ...
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CEM2030 N-Channel ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS 5 5 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse ...
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P-Channel ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage b ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance ...
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CEM2030 ELECTRICAL CHARACTERISTICS (T Parameter DRAIN-SOURCE DIODE CHARACTERISTICS 5 5 Diode Forward Voltage Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing ...
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N-Channel 1.09 5 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Drain-Source Current (A) DS Figure ...
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CEM2030 P-Channel Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 2400 2000 1600 1200 800 400 Drain-to Source Voltage (V) DS Figure 3. Capacitance ...
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P-Channel 1 1.4 I =-250 A D 1.2 1.0 0.8 0.6 0.4 -50 - 100 125 150 Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature ...
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CEM2030 N-Channel 5 V =10V = Qg, Total Gate Charge (nC) Figure 9. Gate Charge P-Channel =-2. ...
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GEN G Figure 11. Switching Test Circuit 2 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 0. Figure 13. Normalized Thermal Transient Impedance Curve d(on ...