CEM4410A Chino Excel Technology, CEM4410A Datasheet
CEM4410A
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CEM4410A Summary of contents
Page 1
... CEM4410A N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V , 10A , R =11m DS(ON) R =20m DS(ON) Super high dense cell design for extremely low R High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @T -Pulsed Drain-Source Diode Forward Current ...
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... Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge CEM4410A = 25 C unless otherwise noted) A Symbol Condition V 0V, I 250µ ...
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... CEM4410A ELECTRICAL CHARACTERISTICS (T Parameter 5 DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing 0 Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 3000 2500 ...
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... DS Figure 7. Transconductance Variation with Drain Current 10 V =15V =10A Qg, Total Gate Charge (nC) Figure 9. Gate Charge CEM4410A 1.15 ID=250 A 1.10 1.05 1.00 0.95 0.90 0.85 -50 - Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature 0.1 0.4 0 Body Diode Forward Voltage (V) SD Figure 8 ...
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... CEM4410A GEN Figure 11. Switching Test Circuit 2 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 0. Figure 13. Normalized Thermal Transient Impedance Curve OUT G S Single Pulse - Square Wave Pulse Duration (sec) 5- d(off) d(on) 90% V OUT INVERTED 10% 90% 50% ...