CEM4435 Chino Excel Technology, CEM4435 Datasheet - Page 2

• Manufacturer Part Number: CEM4435
• Description: P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino Excel Technology

ELECTRICAL CHARACTERISTICS (T
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Output Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Gate-Drain Charge
OFF CHARACTERISTICS
Drain-Source On-State Resistance
On-State Drain Current
Input Capacitance
Turn-Off Delay Time
Total Gate Charge
Gate-Source Charge
Reverse Transfer Capacitance
Rise Time
Fall Time
Parameter
b
c
c
Symbol
R
V
BV
t
I
t
D(OFF)
C
I
D(ON)
C
C
I
DS(ON)
GS(th)
D(ON)
g
Q
Q
DSS
GSS
Q
OSS
RSS
t
t
FS
ISS
DSS
r
f
gs
gd
g
A
5-45
=25 C unless otherwise noted)
V
V
V
V
V
V
V
V
V
I
V
R
V
V
V
f =1.0MH
D
GS
DS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
DS
GEN
= -1A,
Condition
=
=
=
=
=
= -5V, V
=
=
=-15V, V
=-15V, I
= -15V,
= -10V,
=-5V
0V, I
V
-30V, V
-10V, I
-4.5V, I
= 6 Ω
-15V, I
GS
20V, V
, I
Z
D
D
=
D
D
GS
D
= -250µA
D
GS
GS
-250µA
=
= -4.6A,
=
=
DS
= -10V
=
-8A
= 0V
CEM4435
-5A
-8A
0V
= 0V
Min Typ Max Unit
-20
-30
-1
2647
870
227
-1.5
105 145
15
20
60
32
15
22
17
27
4
C
38
100 nA
20
35
30
28
84
-1
-3
µA
mΩ
mΩ
P
P
ns
ns
ns
nC
nC
nC
P
ns
V
S
V
A
F
F
F
5