CEM4487 Chino-Excel Technology Corp., CEM4487 Datasheet

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CEM4487

Manufacturer Part Number
CEM4487
Description
P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Chino-Excel Technology Corp.
Datasheet
FEATURES
ABSOLUTE MAXIMUM RATINGS
P-Channel Enhancement Mode Field Effect Transistor
Details are subject to change without notice .
Lead free product is acquired.
-40V, -4.2A, R
Super high dense cell design for extremely low R
Surface mount Package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
R
DS(ON)
DS(ON)
Parameter
Parameter
= 66mΩ @V
= 105mΩ @V
a
GS
GS
= -10V.
= -4.5V.
b
SO-8
DS(ON)
T
A
.
= 25 C unless otherwise noted
1
1
Symbol
Symbol
T
R
V
V
J
I
P
I
DM
,T
DS
GS
θJA
D
D
stg
-55 to 150
D
S
8
1
Limit
Limit
1
1
62.5
±
-4.2
-40
-17
2.0
CEM4487
20
D
G
7
2
1
1
http://www.cetsemi.com
D
6
S
3
2
2
Rev 1.
D
G
5
4
2
2
Units
Units
C/W
2007.Jan
W
V
V
A
A
C

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CEM4487 Summary of contents

Page 1

... Details are subject to change without notice . = -10V -4.5V DS(ON) SO unless otherwise noted A Symbol stg Symbol R b θJA 1 CEM4487 Limit Units -40 V ± ...

Page 2

... V = -15V -10V d(off -20V -4. 0V -4. CEM4487 Min Typ Max - 100 -100 DS = -250 µ -4. -3.3A 85 105 D = -4.2A 7 695 = 0V, GS 115 -1A, 2.8 4 6Ω ...

Page 3

... I =-250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - Junction Temperature Figure 5. Gate Threshold Variation with Temperature -V =10, 2 100 125 150 3 CEM4487 =125 C - Gate-to-Source Voltage (V) GS Figure 2. Transfer Characteristics 2.2 I =-4. =-10V GS 1.9 1.6 1.3 1.0 0.7 0.4 -100 ...

Page 4

... Figure 11. Normalized Thermal Transient Impedance Curve 4 d(on) V OUT V OUT V IN 10% Figure 10. Switching Waveforms - Square Wave Pulse Duration (msec) 4 CEM4487 2 R Limit DS(ON) 1 1ms 10ms 100ms = =150 C J Single Pulse - ...

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