CEM4481 Chino-Excel Technology Corp., CEM4481 Datasheet

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CEM4481

Manufacturer Part Number
CEM4481
Description
P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Chino-Excel Technology Corp.
Datasheet
FEATURES
ABSOLUTE MAXIMUM RATINGS
Details are subject to change without notice .
P-Channel Enhancement Mode Field Effect Transistor
Lead free product is acquired.
-40V, -4.6A, R
Super high dense cell design for extremely low R
Surface mount Package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
R
DS(ON)
DS(ON)
Parameter
Parameter
= 66mΩ @V
= 105mΩ @V
a
GS
GS
= -10V.
= -4.5V.
b
SO-8
DS(ON)
T
A
.
= 25 C unless otherwise noted
1
1
Symbol
Symbol
T
R
V
V
J
I
P
I
DM
,T
DS
GS
θJA
D
D
stg
-55 to 150
D
8
1
S
Limit
Limit
±
-4.6
-40
-18
2.5
50
CEM4481
20
D
7
S
2
http://www.cetsemi.com
D
S
6
3
Rev 2.
G
D
5
4
Units
Units
C/W
2007.Jan
W
V
V
A
A
C

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CEM4481 Summary of contents

Page 1

... Details are subject to change without notice . = -10V -4.5V DS(ON) SO unless otherwise noted A Symbol stg Symbol R b θJA 1 CEM4481 Limit Units -40 V ± -4.6 A -18 A 2.5 W -55 to 150 C ...

Page 2

... V = -10V GEN t d(off -20V -4.2A -4. 0V -1. CEM4481 Min Typ Max Units - µ 100 -100 mΩ 85 105 mΩ 700 pF = 0V, 120 ...

Page 3

... Figure 5. Gate Threshold Variation with Temperature 2.5 2.2 1.9 1.6 1.3 1.0 0.7 0.4 25 -100 125 150 Figure 6. Body Diode Forward Voltage 3 CEM4481 =125 C - Gate-to-Source Voltage (V) GS Figure 2. Transfer Characteristics I =-4. =-10V GS - 100 150 T , Junction Temperature Figure 4 ...

Page 4

... V OUT V OUT 10% 50 10% PULSE WIDTH Figure 10. Switching Waveforms - CEM4481 Limit 10ms 100ms Drain-Source Voltage (V) DS Figure 8. Maximum Safe Operating Area t off t d(off 90% INVERTED 10% 90% 50% ...

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