CEM4282 Chino-Excel Technology Corp., CEM4282 Datasheet - Page 2

• Manufacturer Part Number: CEM4282
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino-Excel Technology Corp.

Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Parameter
c
c
b
T c = 25 C unless otherwise noted
Symbol
R
V
BV
t
t
V
Q
I
I
I
GS(th)
DS(on)
C
C
C
d(on)
d(off)
Q
Q
DSS
GSSF
GSSR
g
I
t
t
SD
S
iss
oss
rss
r
gd
f
gs
FS
DSS
g
2
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
Test Condition
= 0V, I
= 40V, V
= 20V, V
= -20V, V
= V
= 10V, I
= 4.5V, I
= 5V, I
= 15V, V
= 20V, I
= 10V, R
= 20V, I
= 4.5V
= 0V, I
DS
, I
D
D
S
D
D
D
D
= 250 µ A
D
= 6.6A
= 1.9A
GS
GEN
GS
DS
DS
= 6A,
= 250 µ A
= 6.6A
= 6A,
= 5.3A
= 0V,
= 0V
= 0V
= 0V
= 3
Min
40
1
CEM4282
Typ
675
105
6.4
1.7
2.8
30
38
60
10
25
5
2
2
-100
Max
100
8.5
6.6
1.3
36
48
20
50
1
3
5
5
Units
m
m
µ A
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V
6