CEM4269 Chino-Excel Technology Corp., CEM4269 Datasheet

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CEM4269

Manufacturer Part Number
CEM4269
Description
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Manufacturer
Chino-Excel Technology Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEM4269
Manufacturer:
CET
Quantity:
20 000
FEATURES
ABSOLUTE MAXIMUM RATINGS
Specification and data are subject to change without notice .
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Lead free product is acquired.
40V, 6.1A, R
-40V, -5.2A, R
Super high dense cell design for extremely low R
High power and current handing capability.
Surface mount Package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
Parameter
Parameter
= 32m
= 46m
= 65m
= 43m
a
@V
@V
@V
@V
GS
GS
GS
GS
= 10V.
= 4.5V.
= 4.5V.
= 10V.
T
T
T
T
A
A
A
A
=25 C
=70 C
=25 C
=70 C
b
SO-8
DS(ON)
T
A
= 25 C unless otherwise noted
.
1
1
Symbol
Symbol
T
R
V
V
J
I
P
DM
,T
I
DS
GS
D
D
JA
stg
Channel 1
6.1
4.9
40
20
20
-55 to 150
D
S
8
1
Limit
1
1
1.28
62.5
2.0
CEM4269
D
G
7
2
Channel 2
1
1
-5.2
-4.2
-40
-20
http://www.cetsemi.com
D
6
S
20
3
2
2
Rev 1.
D
G
5
4
2
2
Units
Units
2006.April
C/W
W
V
V
A
C
5

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CEM4269 Summary of contents

Page 1

... C unless otherwise noted A Symbol = = = = stg Symbol CEM4269 Channel 1 Channel 2 Units 40 - ...

Page 2

... 10V d(off 20V 10V 0V 1. CEM4269 Min Typ Max 100 -100 DS = 250 µ 1050 = 0V, GS 155 6A GEN ...

Page 3

... -10V d(off -20V -10V 0V -1. CEM4269 Min Typ Max - 100 -100 DS = -250 µ - - -4.8A 3 1115 = 0V, GS 205 120 -5A ...

Page 4

... Junction Temperature Figure 5. Gate Threshold Variation with Temperature 20 V =4. =4. 2.2 1.9 1.6 1.3 1.0 0.7 0 100 125 150 4 CEM4269 - =125 2.0 2.5 3.0 3.5 4 Gate-to-Source Voltage (V) GS Figure 2. Transfer Characteristics I = =10V GS -100 - 100 150 T , Junction Temperature Figure 4 ...

Page 5

... T , Junction Temperature Figure 11. Gate Threshold Variation with Temperature -V =4. =4. =3. =3. 100 125 150 5 CEM4269 =125 C - Gate-to-Source Voltage (V) GS Figure 8. Transfer Characteristics 2 =-10V GS 1.9 1.6 1 ...

Page 6

... Qg, Total Gate Charge (nC) Figure 15. Gate Charge CEM4269 R Limit DS(ON) 1ms 10ms 100ms = =150 C J Single Pulse - Drain-Source Voltage (V) DS Figure 14. Maximum Safe Operating Area ...

Page 7

... Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve d(on) 90% V OUT V OUT 10% 50 10% PULSE WIDTH Figure 18. Switching Waveforms - CEM4269 t off t d(off 90% INVERTED 10% 90% 50 (t)=r ( θJA θ =See Datasheet θJA 3 ...

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