CEM4279 Chino-Excel Technology Corp., CEM4279 Datasheet

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CEM4279

Manufacturer Part Number
CEM4279
Description
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Manufacturer
Chino-Excel Technology Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEM4279
Manufacturer:
CET
Quantity:
20 000
FEATURES
ABSOLUTE MAXIMUM RATINGS
Details are subject to change without notice .
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Super high dense cell design for extremely low R
Lead free product is acquired.
40V, 6.1A, R
-40V, -4.3A, R
High power and current handing capability.
Surface mount Package.
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
Parameter
Parameter
= 32mΩ @V
= 46mΩ @V
= 66mΩ @V
= 105mΩ @V
a
GS
GS
GS
GS
= 10V.
= 4.5V.
= -10V.
= -4.5V.
b
SO-8
DS(ON)
T
A
= 25 C unless otherwise noted
.
1
1
Symbol
Symbol
T
R
V
V
J
I
P
DM
,T
I
DS
GS
θJA
D
D
stg
N-Channel
±
6.1
40
24
20
D
8
1
S
1
-55 to 150
1
Limit
62.5
2.0
D
CEM4279
G
7
2
1
1
P-Channel
D
S
6
3
2
2
±
-4.3
-40
-17
http://www.cetsemi.com
20
D
G
5
4
2
2
Rev 2.
Units
Units
C/W
2007.Jan
W
V
V
A
A
C
5

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CEM4279 Summary of contents

Page 1

... Details are subject to change without notice . = 10V. = 4.5V. = -10V -4.5V DS(ON) SO unless otherwise noted A Symbol stg Symbol b R θJA 1 CEM4279 N-Channel P-Channel Units 40 -40 V ± ± 20 ...

Page 2

... 10V d(off 20V CEM4279 Min Typ Max 100 -100 DS = 250 µ 6. 4. 1050 = 0V, GS 155 6.1A GEN ...

Page 3

... V = -10V GEN t d(off -20V -4.3A -4. 0V -1. CEM4279 Min Typ Max Units - µ 100 -100 mΩ 85 105 mΩ 705 pF = 0V, 125 ...

Page 4

... T , Junction Temperature Figure 5. Gate Threshold Variation with Temperature 2.2 1.9 1.6 1.3 1.0 0.7 0 100 125 150 4 CEM4279 =125 Gate-to-Source Voltage (V) GS Figure 2. Transfer Characteristics I =6. =10V GS -100 - 100 ...

Page 5

... I =-250µA 1.2 D 1.1 1.0 0.9 0.8 0.7 0.6 -50 - Junction Temperature Figure 5. Gate Threshold Variation with Temperature -V =10, 2 100 125 150 5 CEM4279 =125 C - Gate-to-Source Voltage (V) GS Figure 2. Transfer Characteristics 2.2 I =-4. =-10V GS 1.9 1.6 1.3 1.0 0.7 0.4 -100 ...

Page 6

... DS I =-4. 1.2 2.4 3.6 Qg, Total Gate Charge (nC) Figure 15. Gate Charge 4 CEM4279 2 R Limit DS(ON) 1ms 1 10ms 100ms = =150 C J Single Pulse - Drain-Source Voltage (V) DS Figure 14 ...

Page 7

... Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve d(on) 90% V OUT V OUT 10% 50 10% PULSE WIDTH Figure 18. Switching Waveforms - CEM4279 t off t d(off 90% INVERTED 10% 90% 50 (t)=r ( θJA θ =See Datasheet θJA 3 ...

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