CEM6080 Chino-Excel Technology Corp., CEM6080 Datasheet - Page 2

• Manufacturer Part Number: CEM6080
• Description: Dual Enhancement Mode Field Effect Transistor (N and P Channel)
• Manufacturer: Chino-Excel Technology Corp.

N-Channel Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Parameter
c
c
b
Symbol
R
V
BV
t
t
V
Q
I
I
I
GS(th)
DS(on)
C
C
C
d(on)
d(off)
Q
Q
DSS
GSSF
GSSR
g
I
t
t
SD
S
iss
oss
rss
r
gd
f
gs
FS
DSS
g
2
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
A
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 25 C unless otherwise noted
Test Condition
= 0V, I
= 60V, V
= 20V, V
= -20V, V
= V
= 10V, I
= 4.5V, I
= 15V, I
= 30V, V
= 30V, I
= 10V, R
= 30V, I
= 10V
= 0V, I
DS
, I
D
S
D
D
D
D
D
= 250 µ A
D
= 1.3A
GS
GEN
GS
DS
DS
= 5.6A
= 5.6A,
= 250 µ A
= 5.6A
= 4.4A,
= 4.5A
= 0V,
= 0V
= 0V
= 0V
= 1
Min
60
1
CEM6080
21.8
Typ
655
100
2.9
4.4
35
60
13
60
14
36
3
4
-100
Max
28.9
100
5.6
1.2
45
75
28
72
1
3
6
8
Units
m
m
µ A
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V
6