CEM8435A Chino Excel Technology, CEM8435A Datasheet - Page 3

• Manufacturer Part Number: CEM8435A
• Description: P-channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: Chino Excel Technology

ELECTRICAL CHARACTERISTICS (T
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
Diode Forward Voltage
DRAIN-SOURCE DIODE CHARACTERISTICS
Parameter
3600
3000
2400
1800
1200
600
25
20
15
10
5
0
0
Figure 1. Output Characteristics
0
0
-V
-V
0.5
Figure 3. Capacitance
DS
DS
5
, Drain-to Source Voltage (V)
, Drain-to-Source Voltage (V)
1.0
10
1.5
15
Ciss
Coss
Crss
-V
-V
-V
GS
GS
2.0
GS
20
=10,8,7,6,5V
=4V
=3V
Symbol
2.5
V
25
SD
A
3.0
=25 C unless otherwise noted)
30
5-85
b
V
GS
Condition
= 0V, Is = -2.1A
Figure 4. On-Resistance Variation with
1.5
1.0
0.5
50
40
30
20
10
2
0
0
0
Figure 2. Transfer Characteristics
CEM8435A
Drain Current and Temperature
-V
V
1
GS
GS
=-10V
-I
5
, Gate-to-Source Voltage (V)
D
, Drain Current(A)
2
10
3
Min Typ Max Unit
Tj=125 C
-55 C
-55 C
Tj=125 C
25 C
4
25 C
15
-0.75 -1.2
5
C
20
6
V
5