BGA2711 Philips Semiconductors (Acquired by NXP), BGA2711 Datasheet - Page 3

• Manufacturer Part Number: BGA2711
• Description: BGA2711; Mmic Wideband Amplifier;; Package: SOT363 (UMT6)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
THERMAL RESISTANCE
CHARACTERISTICS
V
2001 Oct 19
V
I
P
T
T
P
R
I
|s
R
R
NF
BW
P
P
IP3
IP3
S
S
S
SYMBOL
stg
j
SYMBOL
SYMBOL
S
tot
D
L(sat)
L 1 dB
th j-s
L IN
L OUT
MMIC wideband amplifier
21
= 5 V; I
(in)
(out)
|
2
S
= 12.6 mA; f = 1 GHz; T
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
thermal resistance from junction to solder
point
supply current
insertion power gain
return losses input
return losses output
noise figure
bandwidth
saturated load power
load power
input intercept point
output intercept point
PARAMETER
PARAMETER
PARAMETER
j
= 25 C unless otherwise specified.
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
at s
f = 1 GHz
f = 2 GHz
at 1 dB gain compression; f = 1 GHz
at 1 dB gain compression; f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
21
2
3 dB below flat gain at 1 GHz
RF input AC coupled
T
s
CONDITIONS
80 C
3
P
tot
CONDITIONS
= 200 mW; T
CONDITIONS
s
80 C
10
MIN.
65
MIN.
12.6
13.1
13.9
11
10
18
13
4.8
4.8
3.6
2.8
0.6
8.3
5.4
0.7
1.8
4.8
8.5
TYP.
VALUE
Product specification
300
6
20
200
+150
150
10
16
MAX.
BGA2711
MAX.
V
mA
mW
dBm
UNIT
K/W
mA
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
C
C
UNIT
UNIT