MTSF1P02HD ON Semiconductor, MTSF1P02HD Datasheet
MTSF1P02HD
Related parts for MTSF1P02HD
MTSF1P02HD Summary of contents
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... Source 1 2 Source Source 3 Gate 4 Top View ORDERING INFORMATION Device Package MTSF1P02HDR2 Micro8 Preferred devices are recommended choices for future use and best overall value. 1 Publication Order Number: MARKING DIAGRAM Drain 7 Drain Drain 6 Drain 5 Shipping 4000 Tape & Reel MTSF1P02HD/D ...
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... P–Channel device omitted for clarity. 1. When mounted on 1 square FR–4 or G–10 board ( 4 Steady State) 2. When mounted on minimum recommended FR–4 or G–10 board ( 4 Steady State) 3. Repetitive rating; pulse width limited by maximum junction temperature. MTSF1P02HD Rating http://onsemi.com 2 ...
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... Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width 300 s, Duty Cycle 5. Switching characteristics are independent of operating junction temperature. 6. Reflects typical values. Max limit – Typ SIGMA MTSF1P02HD ( unless otherwise noted) (Note 4.) Symbol (Cpk 2.0) (Notes 4. & 6.) V (BR)DSS I DSS ...
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... TYPICAL ELECTRICAL CHARACTERISTICS Figure 1. On–Region Characteristics Figure 3. On–Resistance versus Gate–To–Source Voltage Figure 5. On–Resistance Variation with Temperature MTSF1P02HD Figure 2. Transfer Characteristics Figure 4. On–Resistance versus Drain Current and Gate Voltage Figure 6. Drain–To–Source Leakage Current versus Voltage http://onsemi ...
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... RC network. The equations are: t d(on iss /(V GG – V GSP )] t d(off iss GSP ) MTSF1P02HD POWER MOSFET SWITCHING The capacitance (C iss ) is read from the capacitance curve at a voltage corresponding to the off–state condition when calculating t d(on) and is read at a voltage corresponding to the on– ...
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... The mechanisms at work are finite irremovable circuit parasitic inductances and capacitances acted upon by Figure 10. Diode Forward Voltage versus Current MTSF1P02HD Figure 9. Resistive Switching Time Variation versus Gate Resistance high di/dts. The diode’s negative di/dt during directly controlled by the device clearing the stored charge ...
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... A power MOSFET designated E–FET can be safely used in switching circuits with unclamped inductive loads. For Figure 12. Maximum Rated Forward Biased Safe Operating Area MTSF1P02HD Figure 11. Reverse Recovery Time ( SAFE OPERATING AREA reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and must be adjusted for operating conditions differing from those specified ...
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... MTSF1P02HD TYPICAL ELECTRICAL CHARACTERISTICS Figure 14. Thermal Response Figure 15. Diode Reverse Recovery Waveform http://onsemi.com 8 ...
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... When using infrared heating with the reflow soldering method, the difference shall be a maximum MTSF1P02HD interface between the board and the package. With the correct pad geometry, the packages will self–align when subjected to a solder reflow process. ...
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... C 150 C 100 TIME ( MINUTES TOTAL) MTSF1P02HD TYPICAL SOLDER HEATING PROFILE temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board ...
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... FEED DIRECTION NOTES: 1. CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: MILLIMETER. 330.0 (13.20) MAX. NOTES: 1. CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: MILLIMETER. 3. INCLUDES FLANGE DISTORTION AT OUTER EDGE. 4. DIMENSION MEASURED AT INNER HUB. MTSF1P02HD TAPE & REEL INFORMATION 2.05 (.080) 1.95 (.077 8.10 (.318) 7.90 (.312) 5.40 (.212) 5.20 (.205) SECTION B– ...
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... JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 then Dial 866–297–9322 MTSF1P02HD/D ...