MTSF2P02HD Motorola Semiconductor Products, MTSF2P02HD Datasheet - Page 7

• Manufacturer Part Number: MTSF2P02HD
• Description: Single Tmos Power Fet 3.0 Amperes 20 Volts RDS ( on ) = 0.090 Ohm
• Manufacturer: Motorola Semiconductor Products

14) defines the maximum simultaneous drain–to–source vol-
tage and drain current that a transistor can handle safely
when it is forward biased. Curves are based upon maximum
peak junction temperature and a case temperature (T C ) of
25 C. Peak repetitive pulsed power limits are determined by
using the thermal response data in conjunction with the pro-
cedures discussed in AN569, “Transient Thermal Resistance
Motorola TMOS Power MOSFET Transistor Device Data
The Forward Biased Safe Operating Area curve (Figure
0.01
100
0.1
10
1
0.1
Figure 14. Maximum Rated Forward Biased
V GS = 8 V
SINGLE PULSE
T C = 25 C
di/dt = 300 A/ s
Figure 13. Reverse Recovery Time (t rr )
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
SAFE OPERATING AREA
dc
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
Safe Operating Area
1
10 ms
t, TIME
1 ms
– General Data and Its Use.”
verse any load line provided neither rated peak current (I DM )
nor rated voltage (V DSS ) is exceeded, and that the transition
time (t r , t f ) does not exceed 10 s. In addition the total power
averaged over a complete switching cycle must not exceed
(T J(MAX) – T C )/(R JC ).
Switching between the off–state and the on–state may tra-
Standard Cell Density
High Cell Density
100 s
t a
10
t rr
t rr
t b
100
MTSF2P02HD
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