MTSF2P02HDR2 ON Semiconductor, MTSF2P02HDR2 Datasheet

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MTSF2P02HDR2

Manufacturer Part Number
MTSF2P02HDR2
Description
Replacement Part: NTTS2P02R2, Package: Micro-8, Pins=8
Manufacturer
ON Semiconductor
Datasheet

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Part Number:
MTSF2P02HDR2
Manufacturer:
MOT
Quantity:
108 000
Part Number:
MTSF2P02HDR2
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
P–Channel Micro8t
energy in the avalanche and commutation modes and the drain–to–source
diode has a very low reverse recovery time. Micro8 devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
November, 2000 – Rev. 7
These Power MOSFET devices are capable of withstanding high
PCMCIA cards
Life
Miniature Micro8 Surface Mount Package – Saves Board Space
Extremely Low Profile (<1.1mm) for thin applications such as
Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery
Logic Level Gate Drive – Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I DSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
Semiconductor Components Industries, LLC, 2000
Preferred Device
1
Preferred devices are recommended choices for future use
and best overall value.
MTSF2P02HDR2
8
Device
Source
Source
Source
ORDERING INFORMATION
Gate
R DS(on) = 90 mW
WW
1
http://onsemi.com
PIN ASSIGNMENT
2 AMPERES
20 VOLTS
CASE 846A
P–Channel
STYLE 1
= Date Code
Package
2
3
4
Micro8
Top View
Micro8
1
Publication Order Number:
8
7
6
5
4000 Tape & Reel
MTSF2P02HD/D
Shipping
MARKING
DIAGRAM
Drain
Drain
Drain
Drain
WW
AD

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MTSF2P02HDR2 Summary of contents

Page 1

... STYLE Date Code PIN ASSIGNMENT Source 1 2 Source Source 3 Gate 4 Top View ORDERING INFORMATION Device Package MTSF2P02HDR2 Micro8 Preferred devices are recommended choices for future use and best overall value. 1 Publication Order Number: MARKING DIAGRAM Drain 7 Drain Drain 6 Drain ...

Page 2

MAXIMUM RATINGS ( unless otherwise noted) Negative sign for P–Channel devices omitted for clarity Drain–to–Source Voltage Drain–to–Gate Voltage ( 1 Gate–to–Source Voltage – Continuous 1 SQ. FR–4 or G–10 PCB Figure 1 ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS Figure 3. On–Region Characteristics Figure 5. On–Resistance versus Gate–to–Source Voltage Figure 7. On–Resistance Variation with Temperature MTSF2P02HD Figure 4. Transfer Characteristics Figure 6. On–Resistance versus Drain Current and Gate Voltage Figure 8. Drain–to–Source Leakage Current versus Voltage ...

Page 5

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are determined by how fast the FET input capacitance can be charged by current from ...

Page 6

... A ratio considered ideal and values less than 0.5 are considered snappy. Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter have less stored charge and a softer reverse recovery characteristic ...

Page 7

The Forward Biased Safe Operating Area curve (Figure 14) defines the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case ...

Page 8

MTSF2P02HD TYPICAL ELECTRICAL CHARACTERISTICS Figure 15. Thermal Response Figure 16. Diode Reverse Recovery Waveform http://onsemi.com 8 ...

Page 9

INFORMATION FOR USING THE Micro8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure ...

Page 10

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings ...

Page 11

Micro8 Dimensions are shown in millimeters (inches) 4.10 (.161) PIN NUMBER 1 3.90 (.154) 12.30 11.70 (.484) (.461) FEED DIRECTION NOTES: 1. CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: MILLIMETER. 330.0 (13.20) MAX. NOTES: 1. CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: ...

Page 12

... Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–spanish@hibbertco.com Toll–Free from Mexico: Dial 01–800–288–2872 for Access – ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001– ...

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