MTSF3N02HD ON Semiconductor, MTSF3N02HD Datasheet
MTSF3N02HD
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MTSF3N02HD Summary of contents
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... Source 1 2 Source Source 3 Gate 4 Top View ORDERING INFORMATION Device Package MTSF3N02HDR2 Micro8 Preferred devices are recommended choices for future use and best overall value. 1 Publication Order Number: MARKING DIAGRAM Drain 7 Drain Drain 6 Drain 5 Shipping 4000 Tape & Reel MTSF3N02HD/D ...
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... Figure 2 below Steady State Operating and Storage Temperature Range 1. Repetitive rating; pulse width limited by maximum junction temperature. Figure 1. 1, Square FR–4 or G–10 PCB MTSF3N02HD Rating Thermal Resistance – Junction to Ambient Total Power Dissipation @ Linear Derating Factor Drain Current – Continuous @ Continuous @ Pulsed Drain Current (Note 1 ...
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... Reverse Recovery Storage Charge 2. Pulse Test: Pulse Width 300 s, Duty Cycle 3. Switching characteristics are independent of operating junction temperature. 4. Reflects typical values. Max limit – Typ SIGMA MTSF3N02HD ( unless otherwise noted) Symbol (Cpk 2.0) (Notes 2. & 4.) V (BR)DSS I DSS ...
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... TYPICAL ELECTRICAL CHARACTERISTICS Figure 3. On–Region Characteristics Figure 5. On–Resistance versus Gate–to–Source Voltage Figure 7. On–Resistance Variation with Temperature MTSF3N02HD Figure 4. Transfer Characteristics Figure 6. On–Resistance versus Drain Current and Gate Voltage Figure 8. Drain–to–Source Leakage Current versus Voltage http://onsemi ...
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... RC network. The equations are: t d(on iss /(V GG – V GSP )] t d(off iss GSP ) MTSF3N02HD POWER MOSFET SWITCHING The capacitance (C iss ) is read from the capacitance curve at a voltage corresponding to the off–state condition when calculating t d(on) and is read at a voltage corresponding to the on– ...
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... The mechanisms at work are finite irremovable circuit parasitic inductances and capacitances acted upon by Figure 12. Diode Forward Voltage versus Current MTSF3N02HD Figure 11. Resistive Switching Time Variation versus Gate Resistance high di/dts. The diode’s negative di/dt during directly controlled by the device clearing the stored charge ...
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... AN569, “Transient Thermal Resistance – General Data and Its Use.” MTSF3N02HD Figure 13. Reverse Recovery Time ( SAFE OPERATING AREA Switching between the off–state and the on–state may ...
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... MTSF3N02HD TYPICAL ELECTRICAL CHARACTERISTICS Figure 15. Thermal Response Figure 16. Diode Reverse Recovery Waveform http://onsemi.com 8 ...
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... When using infrared heating with the reflow soldering method, the difference shall be a maximum MTSF3N02HD interface between the board and the package. With the correct pad geometry, the packages will self–align when subjected to a solder reflow process. ...
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... C 150 C 100 TIME ( MINUTES TOTAL) MTSF3N02HD TYPICAL SOLDER HEATING PROFILE temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board ...
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... FEED DIRECTION NOTES: 1. CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: MILLIMETER. 330.0 (13.20) MAX. NOTES: 1. CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: MILLIMETER. 3. INCLUDES FLANGE DISTORTION AT OUTER EDGE. 4. DIMENSION MEASURED AT INNER HUB. MTSF3N02HD TAPE & REEL INFORMATION 2.05 (.080) 1.95 (.077 8.10 (.318) 7.90 (.312) 5.40 (.212) 5.20 (.205) SECTION B– ...
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... JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 then Dial 866–297–9322 MTSF3N02HD/D ...