HY27UF081G2M Hynix Semiconductor, HY27UF081G2M Datasheet - Page 21

• Manufacturer Part Number: HY27UF081G2M
• Description: (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.6 / Mar. 2005
Input / Output Capacitance (1)
Input Capacitance(1)
Note: 1. For the stacked devices version the Input Capacitance is <TBD> and the I/O capacitance is <TBD>
Program Time
Dummy Busy Time for Cache Program
Dummy Busy Time for the Lock or Lock-tight Block
Number of partial Program Cycles in the same page
Block Erase Time
Item
Table 13: Program / Erase Characteristics
Table 12: Pin Capacitance (TA=25C, F=1.0MHz)
Parameter
Symbol
C
C
I/O
IN
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Spare Array
Main Array
Test Condition
V
V
IN
IL
=0V
=0V
Symbol
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
t
t
t
t
NOP
NOP
PROG
CBSY
BERS
LBSY
Min
Min
-
-
-
-
-
-
-
-
Typ
300
3
5
2
-
-
Max
10
10
Preliminary
Max
700
700
10
4
4
3
Unit
Cycles
Cycles
pF
pF
Unit
ms
us
us
us
21