HY27UH164G2M Hynix Semiconductor, HY27UH164G2M Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/3/320/hynix_semiconductor_sml.jpg)
HY27UH164G2M
Manufacturer Part Number
HY27UH164G2M
Description
(HY27xHxx4G2M Series) 4G-Bit NAND Flash Memory
Manufacturer
Hynix Semiconductor
Datasheet
1.HY27UH164G2M.pdf
(42 pages)
FEATURES SUMMARY
SUPPLY VOLTAGE
Memory Cell Array
PAGE SIZE
BLOCK SIZE
COPY BACK PROGRAM MODE
CACHE PROGRAM MODE
Rev 0.1 / Feb. 2005
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
- 3.3V device: VCC = 2.7 to 3.6V
- 1.8V device: VCC = 1.7 to 1.95V : HY27SHXX4G2M
- x8 device : (2K + 64 spare) Bytes
- x16 device: (1K + 32 spare) Words
- x8 device: (128K + 4K spare) Bytes
- x16 device: (64K + 2K spare) Words
PAGE READ / PROGRAM
- Random access: 25us (max.)
- Sequential access: 50ns (min.)
- Page program time: 300us (typ.)
- Fast page copy without external buffering
- Internal Cache Register to improve the program
throughput
= (2K+ 64) Bytes x 64 Pages x 4,096 Blocks
= (1K+32) Words x 64 pages x 4,096 Blocks
: HY27(U/S)H084G2M
: HY27(U/S)H164G2M
: HY27UHXX4G2M
4Gbit (512Mx8bit / 256Mx16bit) NAND Flash
FAST BLOCK ERASE
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE DON'T CARE OPTION
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
HARDWARE DATA PROTECTION
DATA INTEGRITY
PACKAGE
- Block erase time: 2ms (Typ.)
- Manufacturer Code
- Device Code
- Simple interface with microcontroller
- Boot from NAND support
- Automatic Memory Download
SERIAL NUMBER OPTION
- Program/Erase locked during Power transitions
- 100,000 Program/Erase cycles
- 10 years Data Retention
- HY27(U/S)H(08/16)4G2M-T(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27(U/S)H(08/16)4G2M-T (Lead)
- HY27(U/S)H(08/16)4G2M-TP (Lead Free)
HY27UH(08/16)4G2M Series
HY27SH(08/16)4G2M Series
Preliminary
2