SBT80-04Y-DL-E ON Semiconductor, SBT80-04Y-DL-E Datasheet - Page 2

• Manufacturer Part Number: SBT80-04Y-DL-E
• Description: Specifications: Diode Type: Schottky ; Diode Configuration: 1 Pair Common Cathode ; Voltage - DC Reverse (Vr) (Max): 40V ; Current - Average Rectified (Io) (per Diode): 8A ; Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A ; Current - Reverse Leakage @
• Manufacturer: ON Semiconductor

Package Dimensions
unit : mm
7001-001
0.01
1.0
0.1
10
3
2
7
5
3
2
7
5
3
2
7
5
3
2
5
3
2
1
0
7
6
4
0
0
Represented by max
Sine wave
Rectangular
wave
2.55
0.8
180
2.55
1
1
360
360
2
10.2
2
Average Output Current, I O -- A
0.4
3
Forward Voltage, V F -- V
1.2
3
2.55
P F (AV) -- I O
2.55
4
I F -- V F
(1)Rectangular wav e =60
(2)Rectangular wav e =120
(3)Rectangular wav e =180
(4)Sine wav e =180
(1)
0.8
5
6
1 : Anode
2 : Cathode
3 : Anode
SANYO : SMP-FD
4.5
(2)
7
1.2
1.3
(4)
0 to 0.3
0.4
8
IT08506
IT08508
9
(3)
SBT80-04Y
1.6
10
100
1.0
10
3.0
2.5
2.0
1.5
1.0
0.5
7
5
3
2
7
5
3
2
7
5
0
Electrical Connection
0
0
(1)Rectangular wav e =300
(2)Rectangular wav e =240
(3)Rectangular wav e =180
(4)Sine wav e =180
Rectangular
wave
Sine wave
Anode
180
360
Cathode
10
10
360
Peak Reverse Voltage, V RM -- V
V R
Reverse Voltage, V R -- V
Anode
P R (AV) -- V RM
V R
20
20
I R -- V R
30
30
P R max at Tj=150 C
40
40
(1)
(2)
(3)
(4)
No.7789-2/3
IT08507
IT08509
50
50