STB100NF04L ST Microelectronics, Inc., STB100NF04L Datasheet - Page 3

• Manufacturer Part Number: STB100NF04L
• Description: N-channel 40V 0.0036 Ohm 100A D2PAK StripFET ii Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Safe Operating Area
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM ( )
t
t
t
I
r(Voff)
Q
Q
d(on)
d(off)
SD (*)
RRM
I
Q
Q
SD
t
t
t
t
t
rr
gs
gd
c
r
f
f
rr
g
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
(Resistive Load, Figure 3)
V
V
R
(Resistive Load, Figure 3)
V
R
(Inductive Load, Figure 5)
I
I
V
(see test circuit, Figure 5)
SD
SD
R
DD
DD
DD
clamp
DD
G
G
G
= 4.7
= 4.7
= 100A
= 100 A
= 32V I
= 20 V
= 20 V
= 20 V
= 4.7
= 32 V
Test Conditions
Test Conditions
Test Conditions
D
= 100A V
Thermal Impedance
di/dt = 100A/µs
V
V
GS
T
V
V
GS
j
I
GS
I
= 150°C
D
GS
D
= 0
GS
D
= 50 A
= 4.5 V
= 100 A
= 4.5 V
= 4.5 V
= 50 A
= 4.5V
Min.
Min.
Min.
Typ.
28.5
Typ.
Typ.
270
125
160
240
5.5
37
72
20
90
80
85
88
Max.
Max.
Max.
100
400
1.3
90
STB100NF04L
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
3/9