STB100NF04L-1 ST Microelectronics, Inc., STB100NF04L-1 Datasheet - Page 3

• Manufacturer Part Number: STB100NF04L-1
• Description: N-channel 40V 0.0036 Ohm 100A D2PAK/I2PAK StripFET ii Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Safe Operating Area
•)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM (
t
t
t
I
r(Voff)
Q
Q
d(on)
d(off)
SD (*)
RRM
I
Q
Q
SD
t
t
t
t
t
rr
gs
gd
c
r
f
f
rr
g
•
)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
(Resistive Load, Figure 3)
V
V
R
(Resistive Load, Figure 3)
V
R
(Inductive Load, Figure 5)
I
I
V
(see test circuit, Figure 5)
SD
SD
R
DD
DD
DD
clamp
DD
G
G
G
= 4.7 Ω,
= 4.7 Ω,
= 100 A
= 100A
= 32V I
= 20 V
= 20 V
= 20 V
= 4.7 Ω
= 32 V
Test Conditions
Test Conditions
Test Conditions
D
= 100A V
Thermal Impedance
di/dt = 100A/µs
V
V
GS
T
V
V
GS
j
I
GS
I
GS
= 150°C
D
D
= 0
GS
D
= 50 A
= 4.5 V
= 100 A
= 4.5 V
= 4.5 V
= 50 A
= 4.5V
Min.
Min.
Min.
Typ.
28.5
Typ.
Typ.
270
125
160
240
5.5
37
72
20
90
80
85
88
STB100NF04L/-1
Max.
Max.
Max.
100
400
1.3
90
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
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