STB11NM80 ST Microelectronics, Inc., STB11NM80 Datasheet - Page 2

• Manufacturer Part Number: STB11NM80
• Description: N-channel 800 V - 0.35 Ohm - 11 a TO-220/TO-220FP/D2PAK/TO-247 Mdmesh Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80
ABSOLUTE MAXIMUM RATINGS
( )
(1)I
(*) Limited only by the Maximum Temperature Allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
ON/OFF
2/10
Pulse width limited by safe operating area
Rthj-case
Rthj-amb
V
SD
Symbol
Symbol
Symbol
dv/dt(1)
R
V
I
(BR)DSS
V
DM
P
<11A, di/dt<400A/µs, V
I
I
V
V
E
GS(th)
DS(on)
T
I
DSS
GSS
DGR
TOT
I
I
AR
T
T
stg
DS
GS
AS
D
D
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Parameter
DD
j
DS
= 25 °C, I
<V
= 0)
(BR)DSS
GS
= 0)
, T
D
C
GS
Parameter
Parameter
= 2.5A, V
J
= 25°C
<T
GS
j
= 20 k )
max)
JMAX
I
V
V
V
V
D
= 0)
DS
DS
GS
DS
GS
= 250 µA, V
CASE
= Max Rating, T
= Max Rating
= ±30V
= V
= 10 V, I
C
C
DD
Test Conditions
= 25°C
= 100°C
GS
= 50 V)
= 25 °C UNLESS OTHERWISE SPECIFIED)
, I
D
D
GS
= 250 µA
= 5.5 A
= 0
C
= 125 °C
Max
Max
TO-220/D
TO-220/D
Min.
800
TO-247
TO-247
3
150
0.83
4.7
1.2
11
44
2
2
PAK
PAK
Max Value
–65 to 150
Value
TBD
TBD
± 30
62.5
800
800
300
15
Typ.
0.35
4
TO-220FP
TO-220FP
4.7 (*)
44 (*)
11 (*)
0.28
35
3.6
Max.
0.40
100
100
10
5
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
mJ
µA
µA
nA
°C
°C
W
V
V
V
A
A
A
A
V
V