STB30NS15 ST Microelectronics, Inc., STB30NS15 Datasheet

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STB30NS15

Manufacturer Part Number
STB30NS15
Description
N-channel 150V - 0.075 Ohm - 30A D2PAK Low Gate Charge StripFET Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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STB30NS15
Manufacturer:
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STB30NS15
Manufacturer:
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STB30NS15T4
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DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
October 2001
STB30NS15
Pulse width limited by safe operating area.
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
Symbol
dv/dt
E
I
V
DM
V
V
P
AS
T
DGR
I
I
T
GS
stg
DS
D
D
TYPE
tot
j
(
(2)
(1)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
LOW GATE CHARGE STripFET™ POWER MOSFET
(on) = 0.075
150 V
V
DSS
Parameter
R
<0.1
DS(on)
C
GS
= 25°C
N-CHANNEL 150V - 0.075
GS
= 20 k )
= 0)
C
C
= 25°C
= 100°C
30 A
I
D
INTERNAL SCHEMATIC DIAGRAM
(1) I
(2) Starting T
SD
30A, di/dt
j
= 25
-55 to 175
o
Value
C, I
± 20
0.73
100A/µs, V
150
150
120
110
250
30
21
2
D
= 15A, V
(Suffix “T4”)
TO-263
D
2
DD
STB30NS15
PAK
DD
1
- 30A D
V
= 25V
(BR)DSS
3
, T
j
T
2
JMAX.
W/°C
V/ns
PAK
Unit
mJ
°C
W
V
V
V
A
A
A
1/9

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STB30NS15 Summary of contents

Page 1

... October 2001 N-CHANNEL 150V - 0.075 R I DS(on) D <0 INTERNAL SCHEMATIC DIAGRAM = 25° 100° 25° (2) Starting T STB30NS15 - 30A PAK TO-263 (Suffix “T4”) Value 150 150 ± 120 110 0.73 2 250 -55 to 175 30A, di/dt 100A/µ ...

Page 2

... STB30NS15 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (*) ON Symbol Parameter ...

Page 3

... (Inductive Load, Figure 5) Test Conditions di/dt = 100A/µ 150° (see test circuit, Figure 5) Thermal Impedance STB30NS15 Min. Typ. Max. Unit Min. Typ. Max. Unit ...

Page 4

... STB30NS15 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . . Normalized on Resistance vs Temperature Normalized Breakdown Voltage vs Temperature STB30NS15 5/9 ...

Page 6

... STB30NS15 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... PAK MECHANICAL DATA MAX. MIN. 4.6 0.173 2.69 0.098 0.23 0.001 0.93 0.028 1.7 0.045 0.6 0.018 1.36 0.048 9.35 0.352 8 10.4 0.394 5.28 0.192 15.85 0.591 1.4 0.050 1.75 0.055 3.2 0.094 0.4 8° STB30NS15 inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.315 0.409 0.334 0.208 0.624 0.055 0.069 0.126 0.016 0° 8° 7/9 ...

Page 8

... STB30NS15 2 D PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 B0 15.7 15.9 0.618 D 1.5 1.6 0.059 D1 1.59 1.61 0.062 E 1.65 1.85 0.065 F 11.4 11.6 0.449 K0 4.8 5.0 0.189 P0 3.9 4.1 0.153 P1 11.9 12.1 0.468 P2 1.9 2.1 0075 R 50 1.574 T 0.25 0.35 .0.0098 W 23.7 24.3 0.933 * on sales type 8/9 TUBE SHIPMENT (no suffix)* inch MAX. 0.421 0.626 ...

Page 9

... Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is registered trademark of STMicroelectronics 2001 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES http://www.st.com STB30NS15 9/9 ...

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