STB3NC60 ST Microelectronics, Inc., STB3NC60 Datasheet
STB3NC60
Manufacturer Part Number
STB3NC60
Description
N-channel 600V - 3.3 Ohm - 3A - D2PAK/I2PAK Powermesh ii MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet
1.STB3NC60.pdf
(9 pages)
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB3NC60
Manufacturer:
ST
Quantity:
10 494
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
February 2000
STB3NC60
Symbol
dv/dt(
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
V
DM
V
V
T
P
DGR
I
I
T
DS
GS
stg
D
D
tot
TYPE
( )
j
1
)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
®
DS(on)
600 V
V
= 3.3
II is the evolution of the first
N - CHANNEL 600V - 3.3 - 3A - D
DSS
< 3.6
R
DS(on)
c
Parameter
GS
= 25
GS
= 20 k )
. The layout
= 0)
o
C
c
c
3 A
= 25
= 100
I
D
o
C
o
C
(
1
) I
PowerMESH
SD
(Suffix "-1")
TO-262
3A, di/dt
INTERNAL SCHEMATIC DIAGRAM
I
2
PAK
100 A/ s, V
1 2
3
-65 to 150
DD
Value
0.64
600
600
150
1.9
12
80
4
3
30
V
STB3NC60
(BR)DSS
2
(Suffix "T4")
PAK/I
TO-263
D
, Tj
2
MOSFET
PAK
T
1
JMAX
3
2
PAK
W/
V/ns
Unit
o
o
W
V
V
A
V
A
A
C
C
o
C
1/9
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