STB80NF55-08 ST Microelectronics, Inc., STB80NF55-08 Datasheet - Page 3

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STB80NF55-08

Manufacturer Part Number
STB80NF55-08
Description
N-channel 55V - 0.0065 Ohm - 80A D2PAK/I2PAK/TO-220 StripFET ii Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Safe Operating Area
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM ( )
t
t
I
Q
Q
d(on)
d(off)
SD (*)
RRM
I
Q
Q
SD
t
t
t
rr
gs
gd
r
f
rr
g
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
(Resistive Load, Figure 3)
V
V
R
(Resistive Load, Figure 3)
I
I
V
(see test circuit, Figure 5)
SD
SD
R
DD
DD
DD
DD
G
G
= 4.7
= 80 A
= 80 A
= 44V I
= 30 V
= 30 V
= 25 V
= 4.7
Test Conditions
Test Conditions
Test Conditions
D
= 80 A V
Thermal Impedance
di/dt = 100A/µs
V
V
V
GS
T
GS
GS
j
I
I
= 150°C
D
D
= 0
GS
= 10 V
= 40 A
= 10 V
= 40 A
= 10V
STB80NF55-08/-1 STP80NF55-08
Min.
Min.
Min.
Typ.
Typ.
Typ.
245
115
6.4
25
85
24
46
70
25
80
Max.
Max.
Max.
320
155
1.5
80
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
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