SST309 Vishay Intertechnology, SST309 Datasheet - Page 4

• Manufacturer Part Number: SST309
• Description: Very High Frequency
• Manufacturer: Vishay Intertechnology

J/SST/U308 Series
Vishay Siliconix
www.vishay.com
7-4
100
100
80
60
40
20
80
60
40
20
15
12
0
0
9
6
3
0
0
0
0
I
g
f = 1 kHz
On-Resistance and Output Conductance
DSS
fs
Drain Current and Transconductance
@ V
V
@ V
V
GS(off)
V
r
g
vs. Gate-Source Cutoff Voltage
vs. Gate-Source Cutoff Voltage
GS(off)
GS(off)
DS
os
0.2
–1
–1
DS
DS
@ I
@ V
V
= 10 V, V
= –1.5 V
DS
Output Characteristics
= 10 V, V
– Gate-Source Cutoff Voltage (V)
r
– Gate-Source Cutoff Voltage (V)
D
DS
DS
– Drain-Source Voltage (V)
= 1 mA, V
= 10 V, V
g
0.4
fs
–2
–2
GS
GS
= 0 V
= 0 V
GS
GS
= 0 V
I
DSS
= 0 V, f = 1 kHz
0.6
–3
–3
g
os
V
GS
= 0 V
–0.2 V
–0.6 V
–1.0 V
–0.4 V
–0.8 V
0.8
–4
–4
–5
–5
1
_
50
40
30
20
10
0
300
240
180
120
60
0
100 pA
0.1 pA
10 nA
10 pA
1 nA
1 pA
20
16
12
30
24
18
12
8
4
0
6
0
0.1
0
0
Common-Source Forward Transconductance
V
T
T
GS(off)
A
A
25_C
V
= 125_C
= 25_C
GS(off)
I
0.2
I
GSS
3
G
= –3 V
V
@
V
= –3 V
DS
Output Characteristics
Gate Leakage Current
@ 125_C
DG
I
D
I
D
– Drain-Source Voltage (V)
= 10 mA
vs. Drain Current
– Drain-Gate Voltage (V)
– Drain Current (mA)
0.4
6
10 mA
T
A
–0.4 V
= –55_C
1
S-04028—Rev. G, 04-Jun-01
Document Number: 70237
125_C
0.6
200 mA
9
V
f = 1 kHz
I
DS
200 mA
GSS
V
GS
= 10 V
12
0.8
@ 25_C
= 0 V
–1.2 V
–1.6 V
–2.0 V
–2.4 V
–0.8 V
15
10
1