BC556A Philips Semiconductors (Acquired by NXP), BC556A Datasheet - Page 3

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BC556A

Manufacturer Part Number
BC556A
Description
BC556; BC557; PNP General Purpose Transistors;; Package: SOT54 (SPT, E-1)
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet

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Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Notes
1. V
2. V
1999 Apr 15
R
I
I
h
V
V
V
C
C
f
F
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BE
th j-a
= 25 C unless otherwise specified.
c
e
PNP general purpose transistors
BEsat
BE
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
BC556
BC557
BC556A
BC556B; BC557B
BC557C
PARAMETER
PARAMETER
I
I
I
I
see Figs 2, 3 and 4
I
I
I
I
I
I
I
I
I
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
C
C
E
C
C
C
= 0; V
= 0; V
= 0; V
= 2 mA; V
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= i
= i
= 10 mA; V
= 200 A; V
e
c
= 0; V
= 0; V
CB
CB
EB
3
= 30 V
= 30 V; T
= 5 V
CONDITIONS
CB
EB
CE
CE
B
B
note 1
CE
CE
= 0.5 V; f = 1 MHz
B
B
= 10 V; f = 1 MHz
CE
= 0.5 mA
= 0.5 mA; note 1
= 5 V;
= 5 V; note 2
= 5 mA
= 5 mA; note 1
= 5 V; note 2
= 5 V; f = 100 MHz 100
CONDITIONS
= 5 V; R
j
= 150 C
S
= 2 k ;
125
125
125
220
420
MIN.
600
VALUE
250
BC556; BC557
3
10
2
TYP.
1
60
180
750
930
650
Product specification
475
800
250
475
800
10
MAX. UNIT
15
4
100
300
650
750
820
UNIT
K/W
nA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
A

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