BSP090 Philips Semiconductors (Acquired by NXP), BSP090 Datasheet - Page 2

• Manufacturer Part Number: BSP090
• Description: P-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a 4-pin plastic SOT223 SMD package.
QUICK REFERENCE DATA
1997 Mar 13
V
V
V
V
I
R
P
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
D
High speed switching
No secondary breakdown
Very low on-state resistance.
Motor and actuator drivers
Power management
Synchronized rectification.
DS
SD
GS
GSth
tot
P-channel enhancement mode vertical
D-MOS transistor
DSon
SYMBOL
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CAUTION
PARAMETER
I
I
T
I
T
S
D
D
s
s
2
= 1.25 A
= 1 mA; V
= 2.8 A; V
= 100 C
= 100 C
PINNING - SOT223
handbook, halfpage
CONDITIONS
Top view
PIN
1
2
3
4
DS
GS
Fig.1 Simplified outline and symbol.
1
= V
= 10 V
GS
SYMBOL
2
g
d
s
d
1
4
MIN.
3
gate
drain
source
drain
Product specification
0.09
5
30
1.3
20
2.8
5.7
DESCRIPTION
MAM121
g
MAX.
BSP090
V
V
V
V
A
W
d
s
UNIT