BSP106 Philips Semiconductors (Acquired by NXP), BSP106 Datasheet - Page 6

• Manufacturer Part Number: BSP106
• Description: N-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
April 1995
handbook, halfpage
handbook, halfpage
N-channel enhancement mode vertical
D-MOS transistor
Fig.6
Fig.8
(pF)
(A)
I D
1.2
0.8
0.4
C
80
60
40
20
0
0
0
0
Typical transfer characteristic; V
Typical capacitances as a function of
drain-source voltage; V
T
T
j
j
= 25 C.
= 25 C.
5
2
10
4
15
GS
= 0; f = 1 MHz;
6
20
V GS (V)
V DS (V)
DS
MDA721
MDA719
C oss
C rss
C iss
= 10 V;
25
8
6
handbook, halfpage
handbook, halfpage
Fig.7
Fig.9
R DSon
( )
2.4
1.6
1.2
0.8
0.4
20
16
12
k
2
8
4
0
50
1
Typical on-resistance as a function of drain
current; T
Temperature coefficient of drain-source
on-resistance;
typical R
k
=
---------------------------------------------- ;
R
DS on
R
10
0
DS on
DS(on)
V GS = 3 V
j
= 25 C.
at 25 C
at 200 mA/10 V.
at T
10
50
2
j
4 V
Product specification
100
10
5 V
10 V
3
I D (mA)
T j ( C)
BSP106
MDA722
MDA720
150
10
4