BSP318 Infineon Technologies Corporation, BSP318 Datasheet - Page 7

• Manufacturer Part Number: BSP318
• Description: Sipmos(r) Small-signal Transistor: 60v, 2.6a
• Manufacturer: Infineon Technologies Corporation

Typ. capacitances
C = f(V
parameter: V
Avalanche Energy
parameter: I
R
GS
mJ
pF
10
10
10
65
55
50
45
40
35
30
25
20
15
10
= 25
5
0
3
2
1
20
0
DS
)
5
40
D
GS
= 2.6 A, V
10
=0 V, f =1 MHz
60
15
80
E
20
AS
DD
100
= f ( T
25
= 25 V
120
30
j
)
°C
V
T
V
j
C
C
C
DS
iss
oss
rss
160
40
Final data
Page 7
Forward characteristics of reverse diode
I
parameter: T j , t
Typ. gate charge
V
parameter: I
F
GS
= f (V
10
10
10
10
A
V
16
12
10
= f ( Q
-1
8
6
4
2
0
0.0
2
1
0
0
BSP318S
BSP318S
SD
0.4
)
Gate
0,2
4
D
= 2.6 A pulsed
V
0.8
)
DS max
p
= 80 µs
8
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
12
1.6
2.0
16
0,8
1999-10-28
BSP318S
V
2.4
DS max
nC
V
V
Q
SD
Gate
3.0
24