2SD814 Panasonic Industrial Company/Electronic Components, 2SD814 Datasheet
2SD814
Manufacturer Part Number
2SD814
Description
Silicon NPN Epitaxial Planer Type ( For High Breakdown Voltage Low-frequency And Low-noise Amplification )
Manufacturer
Panasonic Industrial Company/Electronic Components
Datasheet
1.2SD814.pdf
(2 pages)
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Part Number
Manufacturer
Quantity
Price
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Transistor
2SD814, 2SD814A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
*
h
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Marking
Symbol
FE
Features
High collector to emitter voltage V
Low noise voltage NV.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings
Electrical Characteristics
Rank classification
Parameter
Rank
h
Parameter
FE
2SD814
2SD814A
2SD814
2SD814A
2SD814
2SD814A
2SD814
2SD814A
90 ~ 155
Symbol
V
V
V
I
I
P
T
T
LQ
PQ
CP
C
Q
C
j
stg
CBO
CEO
EBO
I
V
V
h
V
f
C
NV
CBO
T
FE
(Ta=25˚C)
Symbol
CEO
EBO
CE(sat)
ob
*
CEO
(Ta=25˚C)
130 ~ 220
–55 ~ +150
.
Ratings
PR
LR
R
150
185
150
185
100
200
150
50
5
V
I
I
V
I
V
V
V
R
C
E
C
CB
g
CB
CE
CB
CE
= 100 A, I
= 10 A, I
= 30mA, I
= 100k , Function = FLAT
= 10V, I
= 5V, I
= 10V, I
185 ~ 330
= 100V, I
= 10V, I
PS
LS
S
C
Unit
mW
C
mA
mA
Conditions
E
C
˚C
˚C
E
B
V
V
V
= 10mA
B
= –10mA, f = 200MHz
= 0
E
= 0, f = 1MHz
= 1mA, G
= 3mA
= 0
= 0
V
= 80dB
Marking symbol :
1:Base
2:Emitter
3:Collector
0.1 to 0.3
0.65 0.15
0.4 0.2
min
150
185
90
5
1
2
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
150
150
P
L
typ
2.3
2.8
1.5
(2SD814A)
(2SD814)
+0.2
–0.3
+0.25
–0.05
max
330
3
1
1
0.65 0.15
Unit: mm
MHz
Unit
mV
pF
V
V
V
A
1
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Marking = ad ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW ) = ;; Package = SMini5-G1
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Marking = ac ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW ) = ;; Package = SMini5-G1
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Marking = 9L ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW ) = ;; Package = SMini5-F1SMini5-G1
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Marking = 9N ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW ) = ;; Package = SMini5-G1
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Marking = 9P ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 22 ;; R2(Tr2)(kW ) = ;; Package = SMini5-G1
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Marking = em ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW ) = 0.047 ;; Package = SMini5-F1
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Marking = 5R ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = ;; R2(Tr2)(kW ) = ;; Package = SMini5-F1SMini5-G1
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Datasheet:
2SD814 Summary of contents
Page 1
... Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Features High collector to emitter voltage V Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ...
Page 2
... Collector to emitter voltage — 600 V =10V CE 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 0.1 0 100 ( mA ) Collector current I C 2SD814, 2SD814A I — 120 V =10V CE 25˚C 100 Ta=75˚C –25˚ 0.4 0.8 1.2 1.6 2 Base to emitter voltage — I ...