MJD29 Fairchild Semiconductor, MJD29 Datasheet
MJD29
Manufacturer Part Number
MJD29
Description
NPN Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.MJD29.pdf
(4 pages)
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©2001 Fairchild Semiconductor Corporation
General Purpose Amplifier
Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP29 and TIP29C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW
P
h
V
V
V
I
I
I
T
T
V
I
I
I
V
V
f
C
CP
B
CEO
CES
EBO
T
FE
C
J
STG
CBO
CEO
EBO
CEO
CE
BE
Symbol
Symbol
(on)
(sat)
(sus)
300 s, Duty Cycle
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
*Collector-Emitter Sustaining Voltage
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter ON Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
2%
Parameter
a
C
T
=25 C)
=25 C)
: MJD29
: MJD29C
: MJD29
: MJD29C
C
: MJD29
: MJD29C
: MJD29
: MJD29C
: MJD29
: MJD29C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
MJD29/29C
I
V
V
V
V
V
V
V
I
V
V
C
C
CE
CE
CE
CE
BE
CE
CE
CE
CE
= 30mA, I
= 1A, I
= 40V, I
= 60V, I
= 5V, I
= 4V, I
= 4V, I
= 4A, I
= 10V, I
= 40V, V
= 100V, V
Test Condition
1
B
C
= 125mA
C
C
C
B
B
C
= 0
B
= 0.2A
= 1A
= 1A
BE
= 0
= 0
= 200mA
= 0
BE
= 0
1.Base
= 0
D-PAK
2.Collector
- 65 ~ 150
Value
1.56
100
100
150
0.4
40
40
15
5
1
3
1
Min.
100
40
40
15
3
3.Emitter
Max.
0.7
1.3
50
50
20
20
75
1
I-PAK
Rev. A2, June 2001
Units
W
W
Units
V
V
V
V
V
A
A
A
MHz
C
C
mA
V
V
V
V
A
A
A
A
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MJD29 Summary of contents
Page 1
... Fairchild Semiconductor Corporation MJD29/29C 1 T =25 C unless otherwise noted C Parameter : MJD29 : MJD29C : MJD29 : MJD29C = = =25 C unless otherwise noted C Test Condition : MJD29 I = 30mA MJD29C : MJD29 V = 40V MJD29C V = 60V MJD29 V = 40V MJD29C V = 100V 5V 4V ...
Page 2
... V =10V 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Turn Off Time 100 C], CASE TEMPERATURE C Figure 5. Power Derating ©2001 Fairchild Semiconductor Corporation 0.1 0.01 0. 100 I =10I (off)=2V BE 0.1 0. 125 150 175 I =10I ...
Page 3
... Package Demensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev. A2, June 2001 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...